coms image sensor and its manufacturing method

A technology of an image sensor and a manufacturing method, which is applied to semiconductor devices, electric solid-state devices, radiation control devices, etc., can solve the problems of white spots in CMOS image sensors, surface damage of semiconductor substrates, etc. white spot effect
CN106449683BActive Publication Date: 2019-06-28SHANGHAI HUAHONG GRACE SEMICON MFG CORP
3 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Publication Date
2019-06-28

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a COMS image sensor and a manufacturing method thereof. When N-type or P-type source-drain injection is carried out on a logic region, a first photoresist firstly coats a semiconductor substrate; a source-drain region which needs to be subjected to source-drain injection is exposed through exposure and development; and a partial-thickness dielectric layer is etched and N-type or P-type source-drain injection is carried out. The dielectric layer in a protective pixel region of the first photoresist is not etched, and the dielectric layer prevents ion injection from damaging the semiconductor substrate on the surface of a photosensitive diode when the ion injection is carried out in a photosensitive diode region in the pixel region, so that white dots, caused by a semiconductor damage, of the COMS image sensor are avoided; the quality of the COMS image sensor is improved; the method is simple and convenient to operate; and the performance of the COMS image sensor is not affected.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a CMOS image sensor and a manufacturing method thereof. Background technique

[0002] Image sensors are an important part of digital cameras. According to the different components, it can be divided into two categories: CCD (Charge Coupled Device, charge-coupled device) and CMOS (Complementary Metal-Oxide Semiconductor, metal oxide semiconductor device). With the continuous development of the manufacturing process of CMOS integrated circuits, especially the design and manufacturing process of CMOS image sensors, CMOS image sensors have gradually replaced CCD image sensors and become the mainstream. Compared with CMOS image sensors, it has the advantages of higher industrial integration and lower power.

[0003] In a CMOS image sensor, a transfer transistor (TX) is used to transfer photogenerated electrons in a photodiode.

[0004] figure 1 A schematic structural diagra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More