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Anti-fuse single programmable storage cell and operation method of memory

An anti-fuse, characteristic technology, applied in static memory, read-only memory, information storage, etc., can solve the problem of difficult judgment of read data, reduce gate-induced drain leakage current, improve read characteristics, reduce The effect of suppressing the programming current

Active Publication Date: 2015-02-11
EMEMORY TECH INC
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  • Abstract
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AI Technical Summary

Problems solved by technology

The formation positions of the conductive channels are randomly distributed, which makes it difficult to judge the read data

Method used

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  • Anti-fuse single programmable storage cell and operation method of memory
  • Anti-fuse single programmable storage cell and operation method of memory
  • Anti-fuse single programmable storage cell and operation method of memory

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Embodiment Construction

[0071] Figure 1A It is a top view of an antifuse memory cell according to an embodiment of the present invention. Please refer to Figure 1A , the memory cell 100 includes a well region 102, a selection gate 110, a first gate 112, a second gate 114, an insulating layer 116, a first doped region 104, a second doped region 106, and a third doped region 108 and a contact plug 120 , and the well region 102 includes an active region 118 . Wherein, the insulating layer 116 may be filled between the first gate 112 and the second gate 114 .

[0072] In terms of a further layout structure, the select gate 110 is completely formed on the active region 118 . The first gate 112 and the second gate 114 are partially formed on the active region 118 respectively. The first doped region 104 is located on a first side of the select gate 110 , and the second doped region 106 is located on a second side of the select gate 110 . From another point of view, the second doped region 106 is locat...

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Abstract

The present invention discloses a single programmable anti-fuse memory cells and a memory operating method. The single programmable read-only memory cell comprising: a first anti-fuse unit and a second anti-fuse cell, a selection transistor and the well region. The first anti-fuse unit and the second antifuse unit were sequentially formed on the substrate including the antifuse layer antifuse gate. The Selection transistor comprises a select gates, the gate dielectric layer, a first doped region and the second doped region. Select gate disposed on the substrate. A gate dielectric layer is disposed between the gate and substrate selection. A first doped region and the second doped region are provided at both sides of the select gate substrate, wherein the second doped region is located in the base of the first anti-fuse unit and the second anti-fuse cell surrounding. A first well region is disposed in the anti-fuse unit and the substrate below the second anti-fuse unit and is connected to the second doped region.

Description

technical field [0001] The invention relates to a memory and its operating method, in particular to an anti-fuse single-time programmable memory cell with improved reading characteristics and an operating method of the memory. Background technique [0002] Non-volatile memory is a memory that can continue to save the data in the memory after the power is cut off, and can be divided into read only memory (ROM), one time programmable memory (OTP memory) and programmable memory. Read and write memory repeatedly. In addition, with the maturity of semiconductor memory technology, the non-volatile memory can be integrated into a manufacturing process compatible with complementary metal oxide semiconductor (CMOS) devices. [0003] As for the one-time programmable memory mentioned above, it can be classified into fuse type and anti-fuse type. The fuse-type one-time programmable memory is a short circuit in an unprogrammed state, and an open circuit after programming. On the contr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115G11C17/16G11C17/18H10B69/00
Inventor 陈沁仪陈稐寯温岳嘉吴孟益陈信铭
Owner EMEMORY TECH INC
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