Semiconductor device and manufacturing method thereof

Abstract

Provided are a semiconductor configuration and a method for manufacturing the same. The semiconductor configuration may comprise: a substrate (301); and a fin. The fin comprises a first portion (302-1) and a second portion (302-2) formed sequentially on the substrate, and the first portion and the second portion are T shaped as a whole. The second portion has a reduced thickness at a region corresponding to the first portion.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a semiconductor arrangement including a fin structure and a method of manufacturing the same. Background technique [0002] As the size of planar semiconductor devices becomes smaller and smaller, the short channel effect becomes more and more obvious. For this reason, three-dimensional semiconductor devices such as FinFETs (Fin Field Effect Transistors) have been proposed. FinFETs include fins formed vertically on a substrate in which the conductive channel of the device can be formed. Since the height of the fin can be increased without increasing its footprint, the current drive capability per unit footprint can be increased. [0003] FIG. 1( a ) shows a conventional fin structure, and FIG. 1( b ) shows a FinFET based on the fin structure shown in FIG. 1( a ). As shown in FIG. 1( a ), fins 102 may be formed on a substrate 101 . In the example shown in FIG. 1...

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Problems solved by technology

However, where the two branches of the T-shaped fin intersect, such as the region indicated by the arrow in Figure 2(b), the performance of the subthreshold region is poor due to the distance from the gate.

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