Highly integrated u-shaped channel high-mobility junctionless transistor with source-drain-gate assisted control

A high-mobility, high-integration technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems affecting device turn-on characteristics, device reliability, and device mobility degradation, and achieve improved overcoming short-channel effects. Good switching characteristics, the effect of enhanced control

CN104282753BInactive Publication Date: 2017-09-15SHENYANG POLYTECHNIC UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2017-09-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a high-integration sun-shaped source-drain gate auxiliary-controlled U-shaped channel high-mobility junctionless transistor, which adopts two independently controlled gate electrodes, such as a sun-shaped auxiliary control gate electrode and a gate electrode. The doping concentration is used to improve the mobility and avoid the decrease in the mobility and stability of the device caused by the enhanced random scattering effect under high doping concentration. It solves the contradiction between the low doping concentration of ordinary junctionless transistors, which will increase the source-drain resistance, and the high doping concentration, which will reduce the mobility and stability of the device. Crystal silicon is used as the channel part of the device. Compared with the ordinary planar structure, the effective channel length is significantly increased without increasing the chip area to reduce the short channel effect of the device at the deep nanometer scale, so it is suitable for popularization and application. .
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Description

technical field

[0001] The invention belongs to the field of ultra-large-scale integrated circuit manufacturing, and in particular relates to a high-integration sun-shaped source-drain-gate auxiliary control U-shaped channel high-mobility junction-free transistor structure suitable for ultra-high integration integrated circuit manufacturing. Background technique

[0002] The basic unit of integrated circuits, MOSFETs, transistors, with the continuous reduction in size, need to achieve multiple orders of magnitude concentration differences within a distance of several nanometers to form extremely steep source and drain PN junctions. Such a concentration gradient is essential for doping And heat treatment process has extremely high requirements. The above problems can be effectively solved by junction-free field-effect transistors fabricated on SOI wafers. Junction-free transistors adopt multi-subconduction, and the source, drain and channel regions of the device have the same...

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Embodiment Construction

[0061] Below in conjunction with accompanying drawing, the present invention will be further described:

[0062] The present invention provides a high-integration Japanese-shaped source-drain-gate auxiliary control U-shaped channel high-mobility junctionless transistor, through the joint action of the Japanese-shaped auxiliary control gate electrode 3 and the gate electrode 4, which are independently controlled electrodes, Under the condition of low doping concentration, a junction-free transistor with high mobility and low source-drain resistance is realized. Taking the N-type as an example, when the device is working, the sun-shaped auxiliary control gate electrode 3 always maintains a constant high potential, so that the left and right sides of the sun-shaped auxiliary control gate electrode 3 are respectively located under the source electrode 1 and the drain electrode 2. The left and right ends of the U-shaped single crystal silicon 7 form electron accumulation, and the a...