Highly integrated u-shaped channel high-mobility junctionless transistor with source-drain-gate assisted control

Abstract

The invention relates to a high-integration sun-shaped source-drain gate auxiliary-controlled U-shaped channel high-mobility junctionless transistor, which adopts two independently controlled gate electrodes, such as a sun-shaped auxiliary control gate electrode and a gate electrode. The doping concentration is used to improve the mobility and avoid the decrease in the mobility and stability of the device caused by the enhanced random scattering effect under high doping concentration. It solves the contradiction between the low doping concentration of ordinary junctionless transistors, which will increase the source-drain resistance, and the high doping concentration, which will reduce the mobility and stability of the device. Crystal silicon is used as the channel part of the device. Compared with the ordinary planar structure, the effective channel length is significantly increased without increasing the chip area to reduce the short channel effect of the device at the deep nanometer scale, so it is suitable for popularization and application. .

Description

technical field [0001] The invention belongs to the field of ultra-large-scale integrated circuit manufacturing, and in particular relates to a high-integration sun-shaped source-drain-gate auxiliary control U-shaped channel high-mobility junction-free transistor structure suitable for ultra-high integration integrated circuit manufacturing. Background technique [0002] The basic unit of integrated circuits, MOSFETs, transistors, with the continuous reduction in size, need to achieve multiple orders of magnitude concentration differences within a distance of several nanometers to form extremely steep source and drain PN junctions. Such a concentration gradient is essential for doping And heat treatment process has extremely high requirements. The above problems can be effectively solved by junction-free field-effect transistors fabricated on SOI wafers. Junction-free transistors adopt multi-subconduction, and the source, drain and channel regions of the device have the same...

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Problems solved by technology

However, such a highly doped channel will lead to a significant decrease in the mobility of the device, and the random scattering of impurities will seriously affect the reliability of the device.

In order to improve the mobility and reliability of junctionless devices, it is necessary to reduce the doping concentration of the silicon film, but the reduction of the doping concentration will increase the source-drain resistance and affect the turn-on characteristics of the device

In addition, the common transistor structure based on the planar structure, with the continuous shortening of the channel length, the short channel effect is gradually enhanced, and the device is difficult to turn off

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