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A kind of preparation method based on cds nanorod nano optoelectronic device

A technology for optoelectronic devices and nanorods, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems affecting device practicability, long device response time, poor process repeatability, etc., to achieve sensitive response, simple operation and stable performance. Effect

Inactive Publication Date: 2017-02-22
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation process of CdS thin film photoelectric devices is simple, but the device performance is stable, the process repeatability is poor, and the device response time is long, which seriously affects the practicability of the device.

Method used

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  • A kind of preparation method based on cds nanorod nano optoelectronic device
  • A kind of preparation method based on cds nanorod nano optoelectronic device
  • A kind of preparation method based on cds nanorod nano optoelectronic device

Examples

Experimental program
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Effect test

Embodiment 1

[0026] (1) Synthesis of CdS seeds: TOPO (3.299g), ODPA (0.603g), and CdO (0.100g) were mixed in a 50ml flask, heated to 150°C and placed in vacuum for 1h. The solution was heated to 320°C under the protection of nitrogen, and the CdO dissolved solution became colorless and transparent. (TMS)2S (0.170 g), TBP (3 g) were injected when the temperature reached 320°C. The heating mantle was removed after the reaction had proceeded for 7 min. The synthesized nanocrystals were precipitated in methanol, washed repeatedly by its redissolution in toluene and increasing methanol precipitation, and finally the nanocrystals were dissolved in TOP. (2) Synthesis of CdS nanorods: TOPO (3g), ODPA (0.29g), HPA (0.08g) and CdO (0.093g) were placed in a 50ml flask together, heated to 150°C and placed in vacuum for 1h. Under the protection of nitrogen, the solution was heated to above 300°C, and the CdO dissolved solution became colorless and transparent. When the temperature reached 350°C, 1.5g...

Embodiment 2

[0028] Steps (1) (2) The method for synthesizing CdS nanorods, the structure, composition and optical properties of the nanorods are all the same as in Example 1. (3) Assembling CdS nanorods: the prepared electrodes are first assembled. Clean them ultrasonically with acetone, ethanol, and deionized water for 15 minutes, and dry them under vacuum. Depend on Figure 6 The scanning electron microscope (SEM) photo of the middle electrode shows that the electrode spacing is 100 nanometers. CdS nanorods synthesized by the colloidal chemical seed growth method were dissolved in toluene to make a concentration of 10 -7 M CdS nanorods in toluene solution. Next, the prepared electrode chip was immersed in the above solution, and the assembly voltage was 5V, the frequency was 80Hz, and the capture time was 120s by using the method of dielectrophoresis (DEP). After assembly, the chip was gently rinsed with deionized water and dried in a vacuum oven. (4) Photoelectric performance test...

Embodiment 3

[0030] Steps (1) (2) The method for synthesizing CdS nanorods, the structure, composition and optical properties of the nanorods are all the same as in Example 1. (3) Assembling CdS nanorods: the prepared electrodes are first assembled. Clean them ultrasonically with acetone, ethanol, and deionized water for 15 minutes, and dry them under vacuum. Depend on Figure 6 The scanning electron microscope (SEM) photo of the middle electrode shows that the electrode spacing is 100 nanometers. CdS nanorods synthesized by the colloidal chemical seed growth method were dissolved in toluene to make a concentration of 10 -7 M CdS nanorods in toluene solution. Next, the prepared electrode chip was immersed in the above solution, and the method of dielectrophoresis (DEP) was adopted, the assembly voltage was 5V, the frequency was 90Hz, and the capture time was 60s. After assembly, the chip was gently rinsed with deionized water and dried in a vacuum oven. (4) Photoelectric performance t...

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Abstract

The invention relates to a manufacturing method of a nano-photoelectric device, in particular to a manufacturing method of a nano-photoelectric device based on cadmium sulfide (CdS) nano-rods synthesized through colloid chemistry. Through a micro-nano machining technology, Au electrodes with nano-gaps are manufactured on a single crystal silicon (Si) substrate provided with a SiO2 layer of 200 nanometers, and the CdS nano-rods are assembled among the electrodes at the room temperature through a dielectrophoresis (DEP) method. The photoelectric property test result of the nano-photoelectric device indicates that the device has good photoelectric response. The manufacturing method has the advantages that a device adopted in a colloidal chemical method is simple; large-scale production can be performed; and the manufactured nano-rods are stable in performance. Since the device is constructed only by certain nano-rods, so that the device has sensitive response. Moreover, a manufacturing process has the characteristics of high controllability, easiness in operation, high universality and the like, and has a great application prospect.

Description

technical field [0001] The invention relates to a preparation method of a nano photoelectric device, in particular to a preparation method of a nano photoelectric device based on several cadmium sulfide nanorods. [0002] technical background [0003] In recent years, due to the characteristics of modern science and technology development such as small size, complex configuration, high integration and strong interaction, and high surface area, nanomaterials and nanotechnology have developed rapidly, so nanomaterials and nanotechnology will be widely used. Social development and economic revitalization have more and more urgent demands for high technology, and the ultramicronization, high-density integration and high spatial resolution of components require materials to be smaller in size and higher in performance. The goal of being able to manufacture nano-devices with stable performance and sensitive response has attracted the attention of more and more scientific researche...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 李培刚宋佳钟丹霞王顺利汪鹏超朱志艳沈静琴
Owner ZHEJIANG SCI-TECH UNIV