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Daily monitoring method for ion implantation dip angle

An ion implantation, daily technology, applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of economical unsuitability for daily monitoring, waste of resources, etc., to achieve the effect of saving resources and reducing production costs

Active Publication Date: 2015-03-25
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Since a standard inspection needs to consume five monitoring sheets, using this method to monitor the weekly angle of the injection machine is accurate, but it will cause a huge waste of resources, and it is not suitable as a daily monitoring method from an economical point of view.

Method used

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  • Daily monitoring method for ion implantation dip angle
  • Daily monitoring method for ion implantation dip angle
  • Daily monitoring method for ion implantation dip angle

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Embodiment Construction

[0030] The present application relates to a daily monitoring method for ion implantation inclination, which is applied to the monitoring of semiconductor manufacturing equipment, and preferably can be applied to processes of 65 / 55nm, 45 / 40nm and other technical nodes. Through the improved monitoring method of implantation inclination, a small number of monitoring sheets can be used to achieve the effect of continuously monitoring the implantation angle of the ion implanter for a long period of time, saving material resources and reducing production costs.

[0031] The core idea of ​​the present invention is to use a small number of monitoring pieces to monitor the inclination angle for continuous cycles, use the long-term monitoring square resistance statistical curve to monitor the high point of the square resistance, and perform standard angle detection to confirm the angle deviation after discovery.

[0032] The specific embodiment of the present invention will be further de...

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Abstract

A daily monitoring method for an ion implantation dip angle comprises the following steps that firstly, original data about the relation between a square resistor and the ion implantation dip angle are obtained; secondly, a monitoring sheet is selected, ion implantation with the corner angle being zero degree and the dip angle being zero degree is carried out, annealing is carried out after implantation is carried out, the resistance of the square resistor is measured, continuous weekly monitoring is carried out, and the square resistance statistical value is obtained; thirdly, the resistance statistical value obtained through monitoring is compared with the minimum square resistor resistance value in the original data in the first step, if the comparison result is in the difference range allowed by a system, normal production is carried out, and if the comparison result is not in the difference range allowed by the system, a fourth step is carried out; fourthly, the implantation dip angle is re-checked through a five-spot method. By means of the daily monitoring method, a small number of monitoring sheets can be used, the effect of continuously and weekly monitoring the implantation angle of an ion implanter for a long time is achieved, the material resources are saved, and the production cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing equipment monitoring, in particular to a daily monitoring method for ion implantation inclination angles. Background technique [0002] With the continuous evolution of the size of the integrated circuit process, the precision requirements for the injection angle are getting higher and higher. If the angle deviates, it will affect the distribution curve of the implanted impurities in the substrate and then affect the junction depth, resulting in device performance drift and other defects. as a result of. For 65nm and more advanced process nodes, it is usually required that the tilt angle deviation of the implanter can be controlled within ±0.2 degrees. [0003] At present, the standard detection method for inspecting the inclination angle deviation of the injector is the five-point method V-curve (V-Curve), that is, five monitoring pieces are selected, the rotation angle is set to 0 deg...

Claims

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Application Information

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IPC IPC(8): H01L21/66H01J37/317
CPCH01J37/3171H01L21/67253H01L22/20
Inventor 邱裕明
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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