A daily monitoring method for an ion implantation dip angle comprises the following steps that firstly, original data about the relation between a square resistor and the ion implantation dip angle are obtained; secondly, a monitoring sheet is selected, ion implantation with the corner angle being zero degree and the dip angle being zero degree is carried out, annealing is carried out after implantation is carried out, the resistance of the square resistor is measured, continuous weekly monitoring is carried out, and the square resistance statistical value is obtained; thirdly, the resistance statistical value obtained through monitoring is compared with the minimum square resistor resistance value in the original data in the first step, if the comparison result is in the difference range allowed by a system, normal production is carried out, and if the comparison result is not in the difference range allowed by the system, a fourth step is carried out; fourthly, the implantation dip angle is re-checked through a five-spot method. By means of the daily monitoring method, a small number of monitoring sheets can be used, the effect of continuously and weekly monitoring the implantation angle of an ion implanter for a long time is achieved, the material resources are saved, and the production cost is reduced.