Light emitting diode, light emitting diode module and method of manufacturing light emitting diode
A technology of light-emitting diodes and electrode pads, which is applied to electrical components, electrical solid devices, circuits, etc., and can solve problems such as electrical short circuits and device defects
Active Publication Date: 2018-08-10
SEOUL VIOSYS CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
In these cases, since the pad is in direct contact with the solder paste, metal elements such as tin (Sn) in the solder paste diffuse into the LED through the pad, thereby causing an electrical short in the LED and causing device defects
Method used
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[0037] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Exemplary embodiments of the present invention to be described below are provided by way of illustration so that the concept of the present invention can be fully conveyed to those skilled in the art to which the present invention pertains. Therefore, the present invention is not limited to the exemplary embodiments to be described below, but may be implemented in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. Throughout the specification, like reference numerals refer to like elements.
[0038] figure 1 is a schematic cross-sectional view for describing a light emitting diode (LED) module according to an exemplary embodiment of the present invention.
[0039] refer to figure 1 , a light emitting diode (LED) module includes a printed circuit board 51 having pads 53 a a...
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Abstract
A light emitting diode, a light emitting diode module and a method of producing a light emitting diode are disclosed here. The light-emitting diode includes: a first conductivity type semiconductor layer; a step disposed on the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic contact structure connected to the first conductivity type semiconductor layer contact; a second ohmic contact structure, in contact with the second conductive type semiconductor layer on the step; a lower insulating layer, covering the step and the first conductive type semiconductor layer, and having a first opening portion exposing the first ohmic contact structure and exposing The second opening portion of the second ohmic contact structure; and the current distribution layer connected to the first ohmic contact structure exposed through the first opening portion of the lower insulating layer and having a third opening portion exposing the second opening portion.
Description
technical field [0001] Exemplary embodiments of the present invention relate to light emitting diodes (LEDs) and LED modules, and more particularly, to light emitting diodes and modules having the light emitting diodes that can be attached to a board of a printed circuit board or the like by solder paste. Background technique [0002] Since gallium nitride (GaN)-based light emitting diodes (LEDs) were developed, GaN-based LEDs have been widely used in various applications such as natural color LED display elements, LED traffic lights, and white LEDs. [0003] Generally, a GaN-based LED is formed by depositing an epitaxial layer on a plate made of sapphire, and the GaN-based LED includes an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer. Meanwhile, an N-electrode pad is formed on the N-type semiconductor layer and a P-electrode pad is formed on the P-type semicond...
Claims
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IPC IPC(8): H01L33/48H01L27/15H01L33/00
CPCH01L25/0753H01L33/0075H01L33/38H01L33/48H01L2933/0016H01L33/08H01L33/44H01L2224/11H01L33/36H01L33/46H01L33/387H01L33/62H01L33/50
Inventor 蔡钟炫卢元英李俊燮姜珉佑张锺敏金贤儿裴善敏徐大雄
Owner SEOUL VIOSYS CO LTD