Three-terminal atom switching device and preparing method thereof

Abstract

The invention discloses a three-terminal atom switching device and a preparing method thereof, and belongs to the technical field of microelectronic manufacturing and memorizers. The three-terminal atom switching device comprises a stacking structure comprising a source end and a drain end, a vertical groove formed by etching the stacking structure, an M8XY6 channel layer formed on the inner wall and the bottom of the vertical groove, and a control end formed on the surfaces of the M8XY6 channel layer, the vertical groove is full of the control end, and a source end resistor and a drain end resistor are regulated through the control end. On the basis of the three-terminal atom switching device, the high switching ratio characteristic is achieved in the height nonlinearity changing characteristic of the resistance between the source end and the drain end along with the voltage of the control end, the structure is simple, integration is easy, density is high, cost is low, the three-terminal atom switching device can be applied to a gating tube of a cross array structure, and the crosstalk phenomenon caused by leakage current is restrained. The three-terminal atom switching device is also suitable for a plane stacking cross array structure and a vertical cross array structure, and the high-density three-dimensional storage is achieved.

Description

Technical field [0001] The invention relates to the technical field of microelectronics, in particular to a three-terminal atomic switch device suitable for passive cross-array integrated gate tubes and a preparation method thereof. Background technique [0002] Resistive memory, such as resistive random access memory, phase change memory, and magnetic memory, has received high attention at home and abroad due to its excellent characteristics in cell area, three-dimensional integration, low power consumption, high erasing speed and multi-value storage. . [0003] The array architecture of resistive random access memory can be divided into passive cross array and active array. In the passive cross array, each memory cell is determined by the upper and lower electrodes formed by intersecting word lines and bit lines. The smallest memory cell area can be achieved in a planar structure-4F 2 , Where F is the characteristic size. Since the passive cross array does not depend on the pre...

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Problems solved by technology

[0005] The switching ratio of the non-linear resistors reported at both ends is generally low, the leakage current is large, and the transition voltage of the threshold switching device needs to match the operating voltage of the resistive memory, which increases the design difficulty of the non-linear resistors at both ends.

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