Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method

A charged particle beamlet, charged particle technology, applied in circuits, discharge tubes, electrical components, etc., can solve problems such as reduced pattern accuracy

Active Publication Date: 2015-03-25
ASML NETHERLANDS BV
View PDF11 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such heat generation can degrade the accuracy of patterning within the lithography system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method
  • Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method
  • Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The following is a description of various embodiments of the invention, given by way of example only, with reference to the accompanying drawings.

[0036] figure 1 A simplified schematic embodiment of an embodiment of a charged particle lithography apparatus 1 is shown. Such lithographic systems are described, for example, in U.S. Patent Nos. 6,897,458 and 6,958,804 and 7,019,908 and 7,084,414 and 7,129,502, U.S. Patent Application Publication No. 2007 / 0064213, and Serial Nos. 61 / 031,573 and 61 As described in co-pending applications No. / 031,594 and 61 / 045 / 243 and 61 / 055,839 and 61 / 058,596 and 61 / 101 / 682, which are assigned in their entirety to all of the present invention are incorporated herein by reference in their entirety.

[0037] exist figure 1 In the embodiment shown in , the lithographic apparatus 1 comprises a beamlet generator 2 for generating a plurality of beamlets, a beamlet modulator 8 for patterning the beamlets to form modulated beamlets, and a beam...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A charged particle multi-beamlet lithography system comprising a beamlet generator for generating beamlets, a beamlet modulator for forming modulated beamlets, and a beamlet projector for projecting the modulated beamlets onto a target surface. The generator, modulator and / or projector comprise one or more plates provided with apertures for letting the beamlets pass through the plate. The apertures are grouped to form beam areas distinct from non-beam areas having no beamlet apertures. At least one of the plates with apertures is provided with a cooling arrangement (93) disposed on its surface in a non-beam area. The cooling arrangement comprising a plate-shaped body with an inlet (31) for receiving a cooling liquid, a plurality of cooling channels (94) for conveying the cooling liquid therein, and an outlet (35) for removing the cooling liquid. Between the cooling channels, the plate- shaped body has slots (34) that are aligned with the beam areas.

Description

technical field [0001] The present invention relates to charged particle multi-beamlet lithography systems. The invention further relates to the manufacture of cooling arrangements for use in such lithography systems. Background technique [0002] In the semiconductor industry, there is an ever-increasing desire to fabricate smaller structures with high accuracy and reliability. Photolithography is a key part of this manufacturing process. Currently, most commercial photolithography systems use light beams and masks as a means to reproduce pattern data for exposing a target, such as a wafer with a resist coating thereon. In maskless lithography systems, charged particle beamlets can be used to transfer patterns onto such targets. These beamlets can be individually controlled to obtain the desired pattern. [0003] However, in order for such charged particle lithography systems to be commercially viable, they need to handle a certain minimum throughput, i.e., the number o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/04H01J37/317
CPCB82Y10/00B82Y40/00H01J37/045H01J37/3177H01J2237/002H01J2237/31794H01J2237/31774H01J2237/0437H01J2237/0453
Inventor J.P.斯普伦杰斯C.奥滕R.贾杰S.W.H.K.斯廷布林克J.J.科宁W.H.厄尔巴努斯A.H.V.范维恩
Owner ASML NETHERLANDS BV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com