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Resistive memory apparatus and manufacturing method thereof

A technology of resistive storage and resistance, which is applied in the direction of circuits, electrical components, electric solid devices, etc., and can solve the problems of reduced electrical characteristics and reliability of resistive storage devices, reduced process complexity, etc.

Inactive Publication Date: 2015-04-15
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the process for performing the reduction may be very complicated, and the electrical characteristics and reliability of the resistive memory device may be degraded due to voids formed in the data storage cells during the process.

Method used

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  • Resistive memory apparatus and manufacturing method thereof
  • Resistive memory apparatus and manufacturing method thereof
  • Resistive memory apparatus and manufacturing method thereof

Examples

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Embodiment Construction

[0023] Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings.

[0024] Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of example embodiments (and intermediate structures). As such, variations from the shapes of the illustrations due, for example, to manufacturing techniques and / or tolerances are to be expected. Thus, example embodiments should not be construed as limited to the particular shapes of regions illustrated herein but may be to include deviations in shapes that result, for example, from manufacturing. In the drawings, the lengths and sizes of layers and regions may be exaggerated for clarity. Throughout this disclosure, reference numerals correspond directly to like numbered parts of the various figures and embodiments of the present invention. It will also be understood that when a layer is referred to as being "on" another layer or subs...

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Abstract

A resistive memory apparatus includes a first electrode formed on a semiconductor substrate, an insulating layer formed on the first electrode and including a hole exposing an upper surface of the first electrode, a data storage unit in which a first resistance-variable material and a second resistance-variable material are alternately formed in the hole at least once, and a second electrode formed on the data storage unit.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2013-0116400 filed with the Korean Intellectual Property Office on September 30, 2013, the entire contents of which are hereby incorporated by reference. technical field [0003] Various embodiments of the present invention relate to a semiconductor technology, and more particularly, to a resistive memory device having a multi-level cell and a method of manufacturing the same. Background technique [0004] In recent years, with the demand for high performance and low power of semiconductor devices, next-generation memory devices having non-volatile and non-refresh characteristics have been studied. As one of the next-generation memory devices, resistive memory devices have been proposed, and typical examples of resistive memory devices are phase change random access memory (PCRAM), resistive random access memory (ReRAM), magnetic random access memor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H10B69/00
CPCH01L45/144H01L45/1608H10B63/20H10N70/8825H10N70/231H10N70/884H10N70/066H10N70/8828H10N70/826
Inventor 孙敏硕
Owner SK HYNIX INC