A multifunctional plasma chamber processing system
A plasma and processing system technology, used in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., can solve the problems of uneven plasma distribution, inability to achieve uniformity on the wafer surface, and inability to adjust, and achieve a uniform plasma The effect of distribution
Inactive Publication Date: 2017-08-08
CHINA UNIV OF GEOSCIENCES (BEIJING)
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Problems solved by technology
The upper electrodes of the CCP equipment are in a fixed position and cannot be adjusted. The stroke of the plasma in the chamber is fixed. Uniform results are often not obtained when the surface of the wafer is treated
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[0024] Various embodiments of the invention will be described in more detail below with reference to the accompanying drawings. In the various drawings, the same elements are denoted by the same or similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale.
[0025] Such as figure 1 As shown, the multifunctional plasma chamber processing system provided by the present invention includes a CCP device 1, an ICP device 2 and a gas distribution system 3, and the gas distribution system 3 is connected to the CCP device 1 and the ICP device 2 for connecting the The inside of the CCP equipment 1 and the ICP equipment 2 is evacuated, and the mixed gas is also introduced into the CCP equipment 1 and the ICP equipment 2 at the same time. Valves 4 are provided at the connections between the gas distribution system 3 and the CCP equipment 1 and the ICP equipment 2, preferably, the valves 4 are gate valves.
[0026] Such as figure 2...
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The invention relates to a multifunctional plasma cavity processing system. The multifunctional plasma cavity processing system is characterized by comprising a CCP device, an ICP device and a gas distribution system, wherein the gas distribution system is connected with the CCP device and the ICP device, used for vacuumizing the CCP device and the ICP device, and also used for leading mixed gas into the CCP device and the ICP device, a valve is arranged at the position where the gas distribution system is connected with the CCP device, and a valve is arranged at the position where the gas distribution system is connected with the ICP device. According to the multifunctional plasma cavity processing system, the CCP and ICP discharge modes can be obtained through changes of a cavity structure, and two operations can be carried out through the set of devices; the stoke of a plasma can be changed by changing the position of a top electrode of the CCP device; wafers of different sizes can be processed by replacing ICP coils, and uniform plasma distribution can be obtained; the operation for different discharge modes can be obtained through a vacuum control system.
Description
technical field [0001] The invention relates to the technical field of plasma processing, in particular to a multifunctional plasma chamber processing system. Background technique [0002] Plasma equipment occupies a very important position as a type of equipment in integrated circuit manufacturing technology, and has a very wide range of applications in integrated circuit manufacturing technology. Commonly used plasma equipment mainly includes two types, namely: capacitively coupled plasma (CCP) equipment and inductively coupled plasma (ICP) equipment. [0003] The CCP device connects the RF power supply through two parallel electrode plates, applies RF power between the electrode plates, forms an electric field in the middle area of the electrode plates, and ionizes the gas entering between the electrode plates to generate plasma. The ICP device connects the RF power supply to the coil electrode to generate a changing magnetic field in the coil, and then induces an elec...
Claims
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IPC IPC(8): H01L21/67H01J37/32
CPCH01J37/32H01L21/67161
Inventor 杨义勇刘伟峰赵康宁季林红程嘉
Owner CHINA UNIV OF GEOSCIENCES (BEIJING)