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A method for amorphous microwires with extremely high giant magneto-impedance effect

A technology of amorphous microwires and giant magneto-impedance, which is applied in the field of amorphous microwires with extremely high giant magneto-impedance effects, can solve the problems that there are no related reports on amorphous microwires, and achieve repeatable annealing and simple equipment technology , Improve the effect of magnetic permeability

Active Publication Date: 2016-08-24
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are no relevant reports on the way of amorphous microwires with extremely high giant magneto-impedance effect at home and abroad.

Method used

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  • A method for amorphous microwires with extremely high giant magneto-impedance effect
  • A method for amorphous microwires with extremely high giant magneto-impedance effect
  • A method for amorphous microwires with extremely high giant magneto-impedance effect

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Experimental program
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Effect test

specific Embodiment approach 1

[0018] Specific embodiment one: a kind of amorphous microwire of this embodiment has the method for very high giant magneto-impedance effect to carry out according to the following steps:

[0019] 1. Select Co 68.15 Fe 4.35 Si 12.25 B 13.25 Nb 1 Cu 1 For amorphous microwires, the two ends of the microwires are fixed with copper flat-head fixtures, and placed in a zero-magnetic shielding space for impedance testing;

[0020] 2. After completing the impedance test of step 1, connect the microwire and the copper fixture into the circuit with a stable DC power supply, and perform the first step of step Joule annealing: the annealing current is 30-40mA, and the annealing time 8 to 10 minutes, after completion, connect it to the impedance test circuit for impedance test;

[0021] 3. After completing the first step of step two step Joule annealing, carry out the second step of step Joule annealing. The annealing current is 50-60mA, and the annealing time is 8-10min. After compl...

specific Embodiment approach 2

[0027] Embodiment 2: This embodiment is different from Embodiment 1 in that: in step 2, the annealing current is 40 mA, and the annealing time is 10 min. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0028] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: in Step 3, the annealing current is 60 mA, and the annealing time is 10 min. Others are the same as in the first or second embodiment.

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Abstract

The invention provides a method for generating super-high giant magneto impedance effect on an amorphous microwire, and relates to the method for generating the super-high giant magneto impedance effect. The method comprises the following steps: 1, fixing two ends of the microwire through copper flat head fixtures, and placing the microwire in a zero magnetic shielding room to conduct an impedance test; 2, conducting a first step of stepped joule annealing, and then connecting into an impedance test circuit to conduct the impedance test; 3, conducting a second step of the stepped joule annealing, and then connecting into the impedance test circuit to conduct the impedance test; 4, conducting a third step of the stepped joule annealing, and then connecting into the impedance test circuit to conduct the impedance test; 5, conducting a fourth step of the stepped joule annealing, and then connecting into the impedance test circuit to conduct the impedance test. Therefore, the method for generating the super-high giant magneto impedance effect on the amorphous microwire is realized. The method can be applied to the technical field of magnetic sensing and magnetic storing.

Description

technical field [0001] The invention relates to a method with a very high giant magneto-impedance effect. Background technique [0002] The giant magneto-impedance effect can be briefly described as: the phenomenon that the electrical impedance of the material changes dramatically due to the skin effect when an alternating current is applied to the material and a weak magnetic field is applied at the same time. (See Panina, L. and K. Mohri (1994). "Magneto-impedance effect in amorphous wires." Applied Physics Letters 65(9):1189-1191.). Based on this characteristic, the giant magneto-impedance (GMI) magnetic sensor has been developed. (See V. Zhukova, M. Ipatov, A. Zhukov. "Thin Magnetically Soft Wires for Magnetic Microsensors". Sensors. 2009, 9:9216-9240.). As a magnetically sensitive device, the material is required to have a good impedance change rate and high magnetic field sensitivity. Based on this, many studies have focused on improving the giant magnetoimpedance ef...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22F1/10
Inventor 孙剑飞陈东明邢大伟
Owner HARBIN INST OF TECH