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Method of selectively removing silicon nitride and single wafer etching apparatus thereof

A silicon nitride, selective technology used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to solve problems such as cross-contamination, reduced etching performance, and shortened bath life.

Active Publication Date: 2015-04-29
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, particles such as silica precipitates may be generated during the etch process and then accumulate in the bath, reducing etch performance and shortening bath life
In addition, cross-contamination may occur in semiconductor substrates, which requires a post-cleaning process to clean each semiconductor substrate, resulting in additional manufacturing costs

Method used

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  • Method of selectively removing silicon nitride and single wafer etching apparatus thereof
  • Method of selectively removing silicon nitride and single wafer etching apparatus thereof
  • Method of selectively removing silicon nitride and single wafer etching apparatus thereof

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Embodiment Construction

[0028] It should be understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, this is just an example and is not intended to limit the present invention. Moreover, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component is formed on the first component and the second component. Between the parts, such that the first part and the second part are not in direct contact with each other. Various features may be arbitrarily drawn in different scales for simplicity and clarity.

[0029] As used herein, the singular forms "a", "an" and "the" include plural forms unless the contex...

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PUM

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Abstract

A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; providing a mixture of phosphoric acid and a silicon-containing material; and delivering the mixture to the surface of the wafer to remove the silicon nitride. Single wafer etching apparatuses of selectively removing silicon nitride are also provided.

Description

technical field [0001] The present invention generally relates to the semiconductor field, and more specifically, relates to a method for selectively removing silicon nitride and a single-wafer etching device thereof. Background technique [0002] Wet etch processes are used to etch material from targeted locations on semiconductor substrates during integrated circuit (IC) fabrication. The success of the wet etch process requires etch chemistries that include suitable chemical compositions that selectively remove one material while substantially leaving the other material untouched. Therefore, in semiconductor wafer technology, various chemistries have been developed to remove specific types of materials from substrates. [0003] In semiconductor devices, silicon nitride is commonly used as a capping layer, spacer layer or hard mask layer. Typically, the silicon nitride layer on a semiconductor substrate is selectively etched or removed by soaking the substrate in a hot ph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/67
CPCH01L21/6708H01L21/31111
Inventor 张简瑛雪李佑茗杨棋铭
Owner TAIWAN SEMICON MFG CO LTD