Method for preparing array substrate

Abstract

The invention discloses a method for preparing an array substrate and belongs to the technical field of display. The method improves the success rate of the half-exposure technology, and improves the yield of the array substrate. The preparation method comprises the steps of forming a conducting layer to be etched, forming an insulating layer on the conducting layer, forming a photoresist layer on the insulating layer, carrying out the halftone photomask technology or a gray tone photomask technology, removing the insulating layer corresponding to the complete light transmitting area of a photomask, removing the photoresist layer corresponding to a partial light transmitting area, reducing the thickness of the insulating layer corresponding to the partial light transmitting area, removing the conducting layer located at the area without being covered by the insulating layer, forming the structure of the conducting layer, and removing the residual photoresist layer and the insulating layer corresponding to the partial light transmitting area. The method for preparing the array substrate can be applied to display devices such as a liquid crystal display television, a liquid crystal display, a mobile phone and a tablet personal computer.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a method for preparing an array substrate. Background technique [0002] In the manufacturing process of the array substrate, in order to reduce the number of exposures, engineers often use the half-exposure technique. Using half-exposure technology, only one mask (Mask) can be used to pattern more than two layers of materials to be processed at the same time, thereby improving production efficiency and reducing production costs. [0003] However, limited by the material and exposure process, the thickness and excessive slope of the remaining photoresist layer after half-exposure technology are usually not easy to control, which may cause hollowing and other undesirable phenomena in some reserved areas of the photoresist layer. Furthermore, the masking property of the photoresist layer to the underlying material to be processed is reduced, so that the structure formed b...

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Problems solved by technology

[0003] However, limited by the material and exposure process, the thickness and excessive slope of the remaining photoresist layer after half-exposure technology are usually not easy to control, which may cause hollowing and other undesirable phenomena in some reserved areas of the photoresist layer.

In turn, the masking of the photoresist layer to the underlying material to be processed is reduced, so that the structure formed by the material to be processed after the etching process does not conform to the preset

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