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An antifuse structure

A technology of anti-fuse and comb structure, which is applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve the problems of harsh programming conditions, difficult implementation, and long-term stability cannot be guaranteed, and achieve optimal programming conditions and easy programming Effect

Active Publication Date: 2017-10-20
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Although the above two anti-fuse structures are widely used, the anti-fuse structure has the disadvantages that the long-term stability cannot be guaranteed, or the programming conditions are harsh and difficult to implement. The application of the anti-fuse structure brings great obstacles, so it is necessary to further improve the anti-fuse structure in the prior art in order to eliminate the above-mentioned problems

Method used

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  • An antifuse structure
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Examples

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Embodiment approach

[0051] The inner side of the second finger-shaped metal wire is also provided with protruding ends at intervals, and the protruding ends on the first finger-shaped metal wire are opposite to the protruding ends on the second finger-shaped metal wire, or the The protruding end on the first finger-shaped metal wire and the protruding end on the second finger-shaped metal wire are alternately arranged, and the protruding end on the first finger-shaped metal wire is connected to the second finger-shaped metal wire. The gaps between the raised ends of the wires are opposite.

[0052] Further, the inner and outer sides of the first finger-shaped metal wire are provided with protruding ends at intervals along the longitudinal direction.

[0053] Further, the first comb-shaped metal part I includes two first finger-shaped metal wires, and the second comb-shaped metal part II includes two second finger-shaped metal wires, wherein the first finger-shaped metal wires Alternately arrange...

Embodiment 1

[0057] First refer to Figure 2e , the antifuse structure includes a first comb-shaped metal part I and a second comb-shaped metal part II, and the first comb-shaped metal part I and the second comb-shaped metal part II are arranged opposite to each other;

[0058] Wherein the first comb-shaped metal part I includes two first finger-shaped metal wires 204, the second comb-shaped metal part II includes two second finger-shaped metal wires 201, and the first finger-shaped metal wires 204 Alternately arranged with the second finger metal wire 201, wherein, the inner side of the first finger metal wire 204 close to the second finger metal wire 201 is provided with a raised end 205, and the raised end 205 The distance from the second finger metal line 201 is S1.

[0059] In this embodiment, the first metal finger 204 and the second metal finger 201 are divided into two groups, and each group includes a first metal finger 204 and a second metal finger 201, The distance between the...

Embodiment 2

[0071] First refer to Figure 2a , in this embodiment, the inner side of the second finger-like metal wire 201 is also provided with a raised end 205, the inner side of the second finger-like metal wire 201 refers to the protrusion near the first finger-like metal wire On one side of the starting end 205, the protruding end 205 on the first finger-shaped metal wire 204 is opposite to the protruding end 205 on the second finger-shaped metal wire 201, and the first finger-shaped metal wire 204 The distance between the protruding end 205 on the top and the protruding end 205 on the second finger metal wire 201 is S1.

[0072] The protruding ends 205 are longitudinally spaced inside the second finger-shaped metal wire 201 , and the gap between adjacent protruding ends 205 on the second finger-shaped metal wire 201 is S2.

[0073] Preferably, the protruding end 205 on the second finger metal wire 201 is a dot-shaped protruding, and the protruding is square, such as square or recta...

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Abstract

The present invention relates to an antifuse structure, comprising: a first comb-shaped metal part and a second comb-shaped metal part oppositely arranged, wherein the first comb-shaped metal part includes at least two first finger-shaped metal lines, and The second comb-shaped metal part includes at least two second finger-shaped metal wires, the first finger-shaped metal wires and the second finger-shaped metal wires are arranged side by side at intervals, wherein the inner side of the first finger-shaped metal wires A plurality of protruding ends facing the second finger-shaped metal wires are arranged at intervals. In the present invention, the programming conditions can be optimized by designing the antifuse structure as a line-to-tip structure or a tip-to-tip structure, wherein When the raised end is arranged such that the local electric field strength near the raised end is at least doubled when a programming voltage is applied, the enhanced electric field strength reduces the time to achieve breakdown by at least 88%, thereby making it faster , It is easier to realize the programming of the antifuse structure.

Description

technical field [0001] The present invention relates to the field of semiconductors, and in particular, the present invention relates to an antifuse structure. Background technique [0002] In integrated circuits, including CMOS, it is generally desirable to be able to store information permanently, the latter forming permanent connections to the integrated circuit after fabrication. Fusible links or devices can usually be selected to achieve the purpose. For example, fuses can also be used to program redundant components to replace the same failed component. Additionally, fuses may be used to store chip identification or other such information, or to adjust circuit speed by adjusting the resistance of a path. [0003] One type of the fuse device is programmed or blown by laser to disconnect after the semiconductor device is processed and passivated, this type of fuse device requires the laser to be precisely aligned on the fuse device, and the precision is very high. Hig...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/525
Inventor 甘正浩
Owner SEMICON MFG INT (SHANGHAI) CORP
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