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Infrared sensor

An infrared sensor and infrared window technology, applied in the field of infrared sensors, can solve the problems of complex refrigeration components, increase the cost of device manufacturing and use, etc., and achieve the effects of small environmental impact, wide working temperature range, and good market utilization value

Active Publication Date: 2015-05-13
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For some sensitive materials, this temperature may be much lower than room temperature, which may require complex refrigeration components, which also increases the cost of manufacturing and using the device

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Implementation example 1: using graphene oxide material as a sensitive material. Set the target working temperature to 20 °C. The humidity sensitivity characteristic curve of the device made of graphene oxide material at 20 degrees Celsius is: the humidity range of 0-50% RH is about 2pF / 1%RH, and the humidity range of 60-99%RH is about 50pF / 1%RH. Then the humidity sensitivity characteristic curve has a steeper curve in the 60-99% RH humidity range. The graphene oxide device has a temperature response of 100-500 pF / degree Celsius at 20 degrees Celsius and a humidity between 60-99% RH. Then use the structure of the present invention to prepare the graphene oxide capacitive sensing device and seal it in a cavity with a humidity of 60-99% RH (20 degrees Celsius) to form an infrared sensing device. The device has a response of 0.1-0.5pF / mK.

Embodiment 2

[0031] Implementation example 2: using graphene oxide material as a sensitive material. Set the target operating temperature to 50 °C. The humidity sensitivity characteristic curve of the device made of graphene oxide material at 50 degrees Celsius is as follows: the humidity range of 0-30% RH is 2pF / 1%RH, and the humidity range of 40-99%RH is 70pF / 1%RH. Then the humidity sensitivity characteristic curve has a steeper curve in the humidity range of 40-99%RH. The temperature response of the graphene oxide device is 200-1000pF / degree Celsius when the humidity is between 50-99%RH at 50 degrees Celsius. Then use the structure of the present invention to prepare the graphene oxide capacitive sensor device and seal it in a cavity with a humidity of 50-99% RH (50 degrees Celsius) to form an infrared sensor device. The device has a response of 0.2-1 pF / mK.

Embodiment 3

[0032] Implementation example 3: using graphene oxide material as a sensitive material. Set the target operating temperature to 90 °C. The humidity sensitivity characteristic curve of the device made of graphene oxide material at 90 degrees Celsius is: the humidity range of 0-20% RH is 5pF / 1%RH, and the humidity range of 30-99%RH is 90pF / 1%RH. Then the humidity sensitivity characteristic curve has a steeper curve in the humidity range of 20-99%RH. The temperature response of the graphene oxide device is 500-2000pF / degree Celsius when the humidity is between 30-99%RH at 90 degrees Celsius. Then use the structure of the present invention to prepare the graphene oxide capacitive sensing device and seal it in a cavity with a humidity of 30-99% (90 degrees Celsius) to form an infrared sensing device. The device has a response of 0.5-2pF / mK.

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PUM

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Abstract

The invention provides an infrared sensor. The sensitive materials have humidity sensitive property and temperature sensitive characteristic, namely, the concentration of water vapor is high and the capacitance value is large under a fixed temperature condition; the temperature is high and the capacitance value is low under a fixed water vapor concentration condition; a hollow cavity is full of water vapor of which the concentration is more than a jumping threshold; when the concentration of the water vapor is more than the jumping threshold, the variation rate of the temperature sensitive characteristic curve of the sensor prepared from the sensitive materials is more than 0.01pF / mk; the temperature sensitive characteristic curve is a curve that the capacitance value varies as temperature caries under the fixed water vapor concentration condition. According to the infrared sensor, the sensitive materials with the humidity sensitive property and temperature sensitive characteristic is fully exposed in the environment with a certain of water vapor concentration; when the sensitive materials suffer from infrared radiation, the surface temperature raises, and the capacitance value is accordingly changed, on that principle, the infrared radiation can be detected; the operation is convenient and reliable; the environmental influence is minimized, and the applicable working temperature scope is wide.

Description

technical field [0001] The invention relates to an infrared sensor and belongs to the technical field of advanced semiconductor materials and devices. Background technique [0002] Infrared sensors are a type of sensing devices that are sensitive to infrared light. According to the different working principles of the device, it can generally be divided into photon detectors and thermal detectors. Among them, the former uses materials with narrow bandgap as sensitive elements, while the latter can use bolometers, thermopiles and thermoelectric elements. Because photon detection devices generally use materials containing toxic substances, their wide application is limited. At present, infrared detectors based on the principle of calorimetry have received more attention. As an infrared detector sensitive material of a thermal sensor device, it needs to have better absorption of infrared light and better thermal response behavior, such as infrared absorption causing significa...

Claims

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Application Information

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IPC IPC(8): G01J5/34
Inventor 万能黄见秋
Owner SOUTHEAST UNIV