A method of manufacturing a magnetoresistive memory unit
A memory unit and manufacturing method technology, applied in the manufacture/processing of electromagnetic devices, etc., can solve problems such as unfavorable large-scale production, difficult to realize, complicated manufacturing process, etc., and achieve good for large-scale production, easy to realize, materials and structures simple effect
Active Publication Date: 2018-07-20
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for manufacturing magnetoresistive memory cells, which is used to solve the problems of complex manufacturing process in the prior art, which is not easy to realize and is not conducive to large-scale production of magnetoresistive memory. question
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[0095] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0096] see figure 1 Schematic diagram of the manufacturing process of the magnetoresistive memory unit of the present invention and Figure 2-9 Schematic diagram of various stages in the manufacturing process of the magnetoresistive memory unit of the present invention.
[0097] It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the ...
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The invention provides a method for manufacturing a magnetoresistive memory unit. The method includes: forming a main body on a substrate including a lower electrode, a magnetic tunnel junction and an upper electrode in order from bottom to top; forming a first opening on the main body. a first barrier layer; depositing a second barrier layer having a second opening in the first opening; trimming the second barrier layer to retain the second barrier layer between the first opening and the second opening ; Use the second barrier layer as a mask to etch the main body to form a magnetoresistive memory unit with an annular cross-section. The manufacturing process of the magnetoresistive memory unit of the present invention is simple, easy to implement, and is conducive to the large-scale production of the magnetoresistive memory.
Description
technical field [0001] The invention relates to the field of semiconductor devices, in particular to a method for manufacturing a magnetoresistive memory unit. Background technique [0002] In recent years, with the development of semiconductor technology, semiconductor devices are required to be light, thin, and short, which also means that semiconductor devices are developing in the direction of high speed, high integration, and low power consumption. Therefore, it is necessary to improve the structure of semiconductor devices to meet the development requirements of modern technology. Magnetoresistive memory (Magnetic Random Access Memory, MRAM) has become one of the memories that the market pays attention to due to its advantages such as high speed, low voltage, high density, and non-volatility. [0003] MRAM is a technology that stores information in a magnetic tunnel junction (Magnetic Tunnel Junction, MTJ) structure by applying a magnetic field, and reads information ...
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IPC IPC(8): H01L43/12H10N50/01
Inventor 王灵玲张宏张永兴
Owner SEMICON MFG INT (SHANGHAI) CORP