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High-field, large-strain and lead-free ceramic with high energy storage density and preparation method of ceramic

A high energy storage density, lead-free ceramic technology, applied in the field of strain-driven and dielectric energy storage ceramic materials, to achieve the effects of high energy storage efficiency, high withstand voltage and high energy storage density

Inactive Publication Date: 2015-06-03
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, multifunctional lead-free ceramic materials with high field-induced strain and high energy storage density and their preparation methods have not been reported yet.

Method used

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  • High-field, large-strain and lead-free ceramic with high energy storage density and preparation method of ceramic
  • High-field, large-strain and lead-free ceramic with high energy storage density and preparation method of ceramic

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Preparation composition is: [(Bi 0.95 La 0.05 ) 0.5 Na 0.5 ] 1-x-y (Bi 0.5 K 0.5 ) x (Ba 0.85 Sr 0.10 Mg 0.05 ) y Ti 1-u-v C u (A 1 / 2 B 1 / 2 ) v o 3 ,in x =0.005, y =0.06, u =0.05, v =0.03, A=Al, B=Ta, C=Zr ceramic material.

[0032] The preparation method comprises the following steps:

[0033] Electronic grade powder: Bi 2 o 3 、La 2 o 3 、Na 2 CO 3 、K 2 CO 3 、BaCO 3 , SrCO 3 , MgO, ZrO 2 , SnO 2 , HfO 2 、Al 2 o 3 , Fe 2 o 3 、Cr 2 o 3 , MnO 2 , Y 2 o 3 、Co 2 o 3 , Ga 2 o 3 , Nb2 o 5 、 Ta 2 o 5 , Sb 2 o 3 , V 2 o 5 , and TiO 2 as raw materials, respectively according to the following chemical formula:

[0034] [(Bi 0.95 La 0.05 ) 0.5 Na 0.5 ] 1-x-y (Bi 0.5 K 0.5 ) x (Ba 0.85 Sr 0.10 Mg 0.05 ) y Ti 1-u-v C u (A 1 / 2 B 1 / 2 ) v o 3 ,in x =0.005, y =0.06, u =0.05, v =0.03, A=Al, B=Ta, C=Zr

[0035] The batching is carried out, and the ball mill is wet-milled with absolute ethanol as the medium for 24...

Embodiment 2

[0042] Preparation composition is: [(Bi 0.95 La 0.05 ) 0.5 Na 0.5 ] 1-x-y (Bi 0.5 K 0.5 ) x (Ba 0.85 Sr 0.10 Mg 0.05 ) y Ti 1-u-v C u (A 1 / 2 B 1 / 2 ) v o 3 ,in x =0.01, y =0.02, u =0.1, v =0.05, A=Co, B=V, C=Zr ceramic material.

[0043] The preparation method is the same as in Example 1, and the difference is that the calcining temperature is 880°C, and the sintering temperature is 1150°C.

[0044] The performance is shown in Table 1.

Embodiment 3

[0046] Preparation composition is: [(Bi 0.95 La 0.05 ) 0.5 Na 0.5 ] 1-x-y (Bi 0.5 K 0.5 ) x (Ba 0.85 Sr 0.10 Mg 0.05 ) y Ti 1-u-v C u (A 1 / 2 B 1 / 2 ) v o 3 ,in x =0.005, y =0.06, u =0.05, v =0.03, A=Ga, B=Nb, C=Sn ceramic material.

[0047] The preparation method is the same as in Example 1, except that the calcining temperature is 900°C, and the sintering temperature is 1160°C.

[0048] The performance is shown in Table 1.

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Abstract

The invention discloses a lead-free ceramic dielectric material with high field-induced strain and high energy storage density. The composition is represented as a general formula: [(Bi0.95La0.05)0.5Na0.5](1-x-y)(Bi0.5K0.5)x(Ba0.85Sr0.10Mg0.05)yTi(1-u-v)Cu(A(1 / 2)B(1 / 2))vO3, wherein A represents a trivalent metal element and is selected from one or two of Al, Fe, Cr, Mn, Co, Y and Ga; B represents a pentavalent metal element and is selected from one or two of Nb, Sb, Ta and V; C represents a tetravalent metal element and is selected from one of Zr, Mn, Hf and Sn; x, y, u and v represent mole fraction, x is larger than or equal to 0.005 and smaller than or equal to 0.2, y is larger than or equal to 0.005 and smaller than or equal to 0.2, the sum of x and y is smaller than or equal to 0.3, u is larger than or equal to 0.005 and smaller than or equal to 0.3, v is larger than or equal to 0.005 and smaller than or equal to 0.3, and the sum of u and v is smaller than or equal to 0.4. Cold isostatic pressing is adopted, uniform and compact ceramic texture can be acquired, and a preparation process is simple, stable and suitable for industrial popularization and application; the ceramic with high field-induced strain and high energy storage density has excellent energy storage density, energy storage efficiency and high-field strain, the energy storage density can be 1.2 J / cm<3>, the energy storage efficiency can be 59%, the high-field strain can be 0.28%, and the ceramic is environment-friendly, low in energy consumption and good in practicability.

Description

technical field [0001] The invention relates to a strain-driven and dielectric energy storage ceramic material, in particular to a lead-free high-field large-strain and high energy storage density ceramic material and a preparation method thereof. Background technique [0002] With the acceleration of world economic growth, human beings' demand for energy is increasing, so the development and storage of new energy has become one of the indisputable hotspots of current research. Among electric energy storage components, compared with batteries and (electrochemical) supercapacitors, dielectric capacitors have the highest power density, anti-cycle aging, and can realize instant charging. The charging and discharging process does not involve electrochemical reactions. Compared with batteries and supercapacitors It is safer and more reliable, suitable for extreme environments such as high temperature and high pressure, and has stable performance. It has been widely used in defens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/475C04B35/622
Inventor 周昌荣许积文黎清宁袁昌来曾卫东陈国华
Owner GUILIN UNIV OF ELECTRONIC TECH
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