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Structure And Method For Finfet Device With Buried Sige Oxide

An oxide and component technology that is used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as transistor leakage

Active Publication Date: 2015-06-03
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, transistor leakage due to migration of germanium was found

Method used

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  • Structure And Method For Finfet Device With Buried Sige Oxide
  • Structure And Method For Finfet Device With Buried Sige Oxide
  • Structure And Method For Finfet Device With Buried Sige Oxide

Examples

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Embodiment Construction

[0032] The invention provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are of course merely examples and are not intended to be limiting. For example, the following description of a first component being formed over or on a second component may include embodiments in which the first and second components are formed in direct contact, and may also include embodiments in which an additional component is formed between the first and second components. Embodiments of the components such that the first and second components are not in direct contact. Furthermore, the present invention may repeat reference numerals and / or letters in each example. This repetition is for brevity and clarity and does not in itself dictate a relationship between the various embodiments and / or structures described.

[0033] Th...

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Abstract

The present disclosure provides a semiconductor device that includes a substrate of a first semiconductor material; a fin feature having a first portion, a second portion and a third portion stacked on the substrate; an isolation feature formed on the substrate and disposed on sides of the fin feature; semiconductor oxide features including a second semiconductor material, disposed on recessed sidewalls of the second portion, defining dented voids overlying the semiconductor oxide features and underlying the third portion; and a gate stack disposed on the fin feature and the isolation feature. The gate stack includes a gate dielectric layer extended into and filling in the dented voids. The first and third portions include the first semiconductor material having a first lattice constant. The second portion includes the second semiconductor material having a second lattice constant different from the first lattice constant.

Description

technical field [0001] The present invention relates to structures and methods for FinFET devices with buried SiGe oxide. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced generations of ICs, each with smaller and more complex circuits than the previous generation. In the course of IC evolution, functional density (ie, the number of interconnected devices per chip area) has generally increased while geometry size (ie, the smallest component (or line) that can be made using a fabrication process) has decreased. This scaling down process generally benefits by increasing production efficiency and reducing associated costs. [0003] This scaling down process also increases the complexity of processing and manufacturing ICs, and similar developments in IC processing and manufacturing are required in order to achieve these advances. For example, thr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/06
CPCH01L29/1054H01L29/66795H01L29/7849H01L29/785H01L29/517H01L21/28167H01L29/7843H01L29/7869H01L29/42364H01L21/02236H01L21/02255H01L21/2255H01L29/66803H01L29/66818
Inventor 江国诚王志豪吴志强卡洛斯·H.·迪亚兹
Owner TAIWAN SEMICON MFG CO LTD
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