Single-chip high-intensity magnetic field X-axis linear magneto-resistance sensor provided with calibration coil/reset coil

Abstract

A single-chip high-intensity magnetic field X-axis linear magneto-resistance sensor provided with a calibration coil / reset coil comprises a high-intensity magnetic field single-chip reference bridge type X-axis resistance sensor and the calibration coil / reset coil, wherein the calibration coil is a planar coil, the reset coil is a planar or three-dimensional coil, the planar calibration coil and the planar reset coil can be located above a substrate and under a magneto-resistance sensing unit, between the magneto-resistance sensing unit and a soft magnetic flux guider, above the soft magnetic flux guider or at the gap position, the soft magnetic flux guider and the magneto-resistance sensing unit are winded with the three-dimensional rest coil, and the calibration coil and the reset coil respectively produce calibration magnetic fields parallel to pinning layer direction and even reset magnetic fields in free layer direction at the position of a magneto-resistance unit. Calibration and magnetic-state reset of the single-chip X-axis linear magneto-resistance sensor can be achieved by controlling the current of the calibration coil / reset coil, and the single-chip high-intensity magnetic field X-axis linear magneto-resistance sensor ahs the advantages of being efficient, quick to use and convenient to operate.

Description

technical field [0001] The invention relates to the field of magnetic sensors, in particular to a high-intensity magnetic field X-axis linear magnetoresistance sensor with a calibration coil / reset coil on a single chip. Background technique [0002] Silicon magnetic sensors mainly include Hall magnetic sensors, AMR magnetic sensors, and GMR magnetic sensors. The Hall magnetic sensor obtains different resistance values ​​by depositing a semiconductor film such as indium telluride on the substrate, and deflecting the path of the carrier by the external magnetic field. The advantage is that the Hall magnetoresistive sensor can measure a wide range of magnetic fields. , its disadvantage is that the sensitivity of the magnetic field is low, and it is usually necessary to introduce a flux concentrator to amplify the external magnetic field. The AMR magnetic sensor deposits a single-layer magnetic film on the substrate, changes the magnetic moment direction of the magnetic film th...

AI Technical Summary

Problems solved by technology

The Hall magnetic sensor obtains different resistance values ​​by depositing a semiconductor film such as indium telluride on the substrate, and deflecting the path of the carrier by the external magnetic field. The advantage is that the Hall magnetoresistive sensor can measure a wide range of magnetic fields. , the disadvantage is that the sensitivity of the magnetic field is low, and it is usually necessary to introduce a flux concentrator to amplify the external magnetic field

The AMR magnetic sensor deposits a single-layer magnetic film on the substrate, changes the magnetic moment direction of the magnetic film through an external magnetic field, thereby changing the resistance at both ends, and its sensing unit and electrodes are prepared as oblique strips, so that the current direction and magnetic field The direction forms a certain angle, so that the direction of the magnetic field can be distinguished. Its advantage is that the sensor unit is simple and only has one layer of thin film. The disadvantage is that the sensor’s magnetic field change rate is low and its sensitivity is poor.

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