Active silicon substrate manufacturing method

Abstract

The invention discloses an active silicon substrate manufacturing method. The method includes the steps that firstly, a first non-photosensitive BCB medium layer is coated on and cured on an active wafer, secondly, then through holes are formed in a BCB film layer in a photoetching and etching mode, a first TiW / Au conduction band layer is manufactured on the BCB medium layer, then a second non-photosensitive BCB medium layer is coated on and cured on the first conduction band layer, then a second TiW / Au conduction layer is manufactured on the BCB medium layer, and finally a non-photosensitive BCB passivation layer and a passivation layer window are manufactured on the surface of the second TiW / Au conduction layer. By means of the active silicon substrate manufacturing method, the active chip wafer serves as circuit substrate materials, through a thin-film multilayer wiring technology, the novel BCB medium materials are adopted, a chip I / O is vertically connected with the chip level of peripheral elements, and an active silicon substrate with the high assembling efficiency and high performance and based on the active wafer is formed. The active silicon substrate manufacturing method solves the problems that a conventional 3D structure is low in assembling efficiency, large in packaged size, low in performance index and the like.

Description

technical field [0001] The invention belongs to the field of basic electrical components, and relates to a manufacturing method of a semiconductor device, in particular to a manufacturing method of an active silicon substrate. Background technique [0002] The substrate is the core component of electronic equipment, and it undertakes key functions such as mechanical support, heat dissipation and conduction. In order to meet the needs of miniaturization, multi-function and system integration of electronic products, three-dimensional (3D) system-in-package method has been paid more and more attention. There are mainly three types of 3D structures of multi-chip modules (MCMs), namely embedded 3D, active substrate 3D and stacked 3D. Among them, the active substrate has the advantages of the smallest volume, performance index, assembly density and high reliability. Therefore, the advanced system-in-package is focusing on the research of active wafer and embedded chip 3D substrat...

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Problems solved by technology

[0004] At present, BCB dielectric materials have been widely used in foreign countries. BCB materials are divided into two types: photosensitive and non-photosensitive. There are also researches and preliminary applications in domestic factories, but there are mainly problems of adhesion between BCB media and upper and lower materials. Other Processing Difficulties

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