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Vertical interconnection structure for millimeter wave frequency band chip packaging

A millimeter-wave frequency band and vertical interconnection technology, which is applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of poor transmission performance and achieve the effects of small signal transmission loss, easy implementation, and good isolation

Pending Publication Date: 2021-07-13
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technology of the present invention solves the problem: overcomes the deficiencies of the prior art, provides a vertical interconnection structure for millimeter-wave frequency band chip packaging, and solves the impedance loss caused by the inductance effect and discontinuity of the millimeter-wave frequency band chip packaging interconnection structure. The disadvantage of poor transmission performance caused by matching makes the chip packaging structure develop in the direction of high transmission performance, high integration, and light weight. The interconnection structure has the advantages of simple structure and easy implementation.

Method used

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  • Vertical interconnection structure for millimeter wave frequency band chip packaging
  • Vertical interconnection structure for millimeter wave frequency band chip packaging
  • Vertical interconnection structure for millimeter wave frequency band chip packaging

Examples

Experimental program
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Effect test

Embodiment 1

[0033] Such as figure 1 As shown, the vertical interconnection structure for chip packaging in the millimeter wave frequency band according to Embodiment 1 of the present invention respectively includes from top to bottom: a first transmission line (passivation layer 102, coplanar waveguide 103, passivation layer 104, liner Bottom 105, back conductor 106, passivation layer 107, hole 108), first metal pad 101, first dielectric 002, Bump001, second dielectric 003, second metal pad 201 and second transmission line (passivation layer 202 , coplanar waveguide 203, passivation layer 204, substrate 205, back conductor 206, passivation layer 207, hole 208).

[0034] Such as figure 2 As shown, the overall structural layered diagram of the vertical interconnection structure used for millimeter-wave frequency band chip packaging in Embodiment 1 of the present invention, the structure includes: Bump001, the first metal pad 101, the second metal pad 201, and a coplanar waveguide The gro...

Embodiment 2

[0049] Such as Figure 5 As shown, the vertical interconnection structure for millimeter-wave frequency band chip packaging according to Embodiment 2 of the present invention includes: Bump001, medium 002, metal pad 101, metal pad 201, first transmission line (passivation layer 102, coplanar waveguide 103, passivation layer 104, substrate 105, backside conductor 106, passivation layer 107, hole 108), second coplanar waveguide_backside conductor_hole transmission line (passivation layer 202, coplanar waveguide 203, passivation layer 204, substrate 205, back conductor 206, passivation layer 207, hole 208), the first and second coplanar waveguide_back conductor_hole transmission line is connected together with two metal pads through Bump, wrapping dielectric around Bump001 002.

[0050] The first and second transmission lines have the same structure and size, with an impedance of 50 ohms. A passivation layer 104, 204 is designed on the top layer of the substrate 105, 205, and a ...

Embodiment 3

[0060] Such as figure 1 As shown, the vertical interconnection structure for chip packaging in the millimeter wave frequency band according to Embodiment 3 of the present invention respectively includes from top to bottom: a first transmission line (passivation layer 102, coplanar waveguide 103, passivation layer 104, liner Bottom 105, back conductor 106, passivation layer 107, hole 108), first metal pad 101, first dielectric 002, Bump001, second dielectric 003, second metal pad 201 and second transmission line (passivation layer 202 , coplanar waveguide 203, passivation layer 204, substrate 205, back conductor 206, passivation layer 207, hole 208).

[0061] The structure and size of the first transmission line and the second transmission line are the same, and the impedance is 50 ohms. Both the first transmission line and the second transmission line have a coplanar waveguide-back conductor-hole structure, and a flip-chip welding process is used to realize the connection bet...

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Abstract

The invention discloses a vertical interconnection structure for millimeter wave frequency band chip packaging, which comprises a transmission line, a metal bonding pad, a medium and a Bump, the medium is added at the interconnection structure of the metal bonding pad and the Bump, the capacitance effect of the medium offsets the inductance effect of the Bump, the impedance mismatch is reduced, the transmission performance of the vertical interconnection structure is improved, the insertion loss is less than 0.55 dB at the frequency band of 0.1 GHz-100GHz, and the return loss is superior to -20dB. The vertical interconnection structure has the advantages of small signal transmission loss, short interconnection path (shortened by 20%), high integration (improved by 40%), good isolation and the like, and solves the problems of large size, heavy weight and poor isolation and heat dissipation of the millimeter wave band chip interconnection structure and the vertical interconnection structure has the advantages of being simple in structure, easy to implement and the like, and has good application prospects in interconnection design of active devices and passive devices in millimeter wave frequency bands.

Description

technical field [0001] The invention relates to the technical field of millimeter-wave frequency band chip packaging, in particular to a multi-chip packaging vertical interconnection structure. Background technique [0002] The millimeter wave band (30-300GHz) has the advantages of wide frequency band, narrow beam, and large information capacity, and is widely used in basic research fields such as physics, satellite communications, radar, electronic countermeasures, life sciences, and medicine. Under the trend of high integration of microwave and millimeter wave systems, three-dimensional packaging can effectively improve the miniaturization of equipment, increase the degree of integration and the reliability of the system. Compared with the traditional structure, the development cycle is short, the cost is low, the integration degree is high, and the process is relatively simple, so the three-dimensional vertical interconnection technology has become the key technology for ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/488H01L23/48H01L23/485H01L23/66
CPCH01L24/16H01L23/481H01L23/485H01L23/66H01L2224/16055H01L2224/16059H01L2224/16148H01L2224/16501H01L2223/6627H01L2223/6611H01L2223/6616
Inventor 孙陈红林福江
Owner UNIV OF SCI & TECH OF CHINA
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