81results about How to "Reduce signal transmission loss" patented technology

A semiconductor device integrated with optoelectronic components includes a carrier board with at least two openings; a first and a second optoelectronic component disposed in the openings respectively, each of them having an active surface and an opposite non-active surface, wherein the active surface has a plurality of electrode pads and an optical active area; a dielectric layer formed on a surface of the carrier board and the active surfaces, and having a plurality of vias and openings to expose the electrode pads and the optical active areas respectively; and a circuit layer formed on a surface of the dielectric layer and electrically connected to the electrode pads directly. Then, at least one waveguide is formed on the surface of the semiconductor device integrated with the optoelectronic component to provide signal transmitting between the first and second optoelectronic components, therefore, shortens the signal transmission path, reduces the transmission loss and noise, and hence improves the signal transmission quality.

To improve the transmission efficiency of a necessary transmission mode by providing an unnecessary-wave suppression groove that prevents an unnecessary transmission mode from being excited at a mode conversion part between a rectangular waveguide and a circular waveguide. A rectangular waveguide 2 is connected to a circular waveguide 4 at right angles, and an unnecessary-wave suppression groove 5 that extends along tube walls 2B, 2C, and 2D of the rectangular waveguide 2 and a tube wall 4A of the circular waveguide 4 is provided at a mode conversion part between the rectangular waveguide 2 and the circular waveguide 4. Thus, the unnecessary-wave suppression groove 5 can prevent an unnecessary TE 11 mode from being excited in the circular waveguide 4 due to electromagnetic waves of the TE 10 mode that transmit through the rectangular waveguide 2, thereby reducing conversion loss due to the TE 11 mode. Accordingly, electromagnetic waves of the TM 01 mode can be efficiently excited in the circular waveguide 4, and signals can be stably transmitted between the waveguides 2 and 4.

A circuit board structure with optoelectronic component embedded therein comprises a carrier board with at least two through openings; a first optoelectronic component and a second optoelectronic component disposed in the openings respectively, wherein a plurality of electrode pads and optical active areas are formed on the active surfaces of the optoelectronic components; a dielectric layer formed on a surface of the carrier board and the active surface of the optoelectronic components, wherein a plurality of vias for exposing the electrode pads and two holes for exposing the optical active areas are formed in the dielectric layer; a circuit layer formed on a surface of the dielectric layer and electrically connected to the electrode pads of the optoelectronic components; an insulating protecting layer formed on the dielectric layer and the circuit layer; and at least one optical transmission element formed on a surface of the insulating protecting layer.

The invention relates to a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) contact type fluorescent homogeneous assay array sensing chip which comprises a chip body, wherein the chip body comprises a silicon gel substrate, an SU-8 thick adhesive, a signal processing circuit, a photoelectric sensing array, an active preprocessing amplifying array and an asynchronous time sequence control circuit; the SU-8 thick adhesive is fixed on the upper surface of the silicon substrate, at least one florescent reaction pool group is arranged on the SU-8 thick adhesive, each florescent reaction pool group comprises at least one micro-reaction pool, and the signal processing circuit, the photoelectric sensing array, the active preprocessing amplifying array and the asynchronous time sequence control circuit are correspondingly laid on the silicon gel substrate positioned just below the florescent reaction pool group; the signal output end of the signal processing circuit is connected with a pressure welding block. The CMOS contact type fluorescent homogeneous assay array sensing chip has the beneficial effects that a photoelectric PN junction diode is capable of converting fluorescent into a photoelectric current; the photoelectric PN junction diode is integrated with the active signal processing circuit monolithically, thus the signal transmission loss is reduced, and the detection microminiaturization is realized; the micro-reaction pool is capable of detecting one sample or simultaneously detecting a plurality of samples.

A tri-band multiwell radome includes a dense polymeric strike plate that is configured on the outside of the radome, a capture layer and a tuning layer. The polymeric strike plate is a tough polymer, such as a polycarbonate and breaks a bullet into fragments that are more easily captured by the capture layer. The capture layer includes a number of fabric sheets of highly oriented fibers, such as polyethylene fibers, and a binder. The tuning layer may be a low density foam that is configured inside of the capture layer and provided to reduce reflective losses and improve ballistic performance. A tri-band radome cover may have a dB loss over a wavelength of 8 to 40 kHz of no more than 1 dB. A tri-band radome cover may be formed in a dome shape.