cmos contact fluorescence detection analysis array sensor chip

Abstract

The invention relates to a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) contact type fluorescent homogeneous assay array sensing chip which comprises a chip body, wherein the chip body comprises a silicon gel substrate, an SU-8 thick adhesive, a signal processing circuit, a photoelectric sensing array, an active preprocessing amplifying array and an asynchronous time sequence control circuit; the SU-8 thick adhesive is fixed on the upper surface of the silicon substrate, at least one florescent reaction pool group is arranged on the SU-8 thick adhesive, each florescent reaction pool group comprises at least one micro-reaction pool, and the signal processing circuit, the photoelectric sensing array, the active preprocessing amplifying array and the asynchronous time sequence control circuit are correspondingly laid on the silicon gel substrate positioned just below the florescent reaction pool group; the signal output end of the signal processing circuit is connected with a pressure welding block. The CMOS contact type fluorescent homogeneous assay array sensing chip has the beneficial effects that a photoelectric PN junction diode is capable of converting fluorescent into a photoelectric current; the photoelectric PN junction diode is integrated with the active signal processing circuit monolithically, thus the signal transmission loss is reduced, and the detection microminiaturization is realized; the micro-reaction pool is capable of detecting one sample or simultaneously detecting a plurality of samples.

Description

technical field [0001] The invention relates to a CMOS contact fluorescent detection and analysis array sensor chip. Background technique [0002] Fluorescence detection methods have been widely used in gene information detection, virus detection, DNA sequence testing, etc. It is currently one of the most important and convenient detection technologies in the field of biochemistry. Commonly used detectors for fluorescence detection include photomultiplier tubes (PMTs), avalanche diodes (APDs), and charge-coupled devices (CCDs). Outputting a corresponding voltage value, the detection and signal processing of discrete components have the characteristics of large size, high price, high working voltage and incompatibility with CMOS technology. In the CMOS process, photosensitive devices with diode, triode or grating structure can be realized, and signal processing circuits can also be monolithically integrated. The detection equipment composed of these devices has the advantage...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problem that fluorescence will generate loss between the fluorescence reaction pool and the fluorescence detector during the test of the current fluorescence detection device and reduce the sensitivity of fluorescence detection, the present invention proposes a CMOS contact type fluorescence detection analysis with high test sensitivity and low loss array sensor chip

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