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Method for manufacturing metal insulator metal capacitor and resistor at the same gradation

A technology of capacitors and thin film resistors, which is applied in the direction of non-adjustable metal resistors, stacked capacitors, capacitors, etc., can solve the problems of redundancy, increased interconnection delay, and complicated leads, so as to reduce interconnection delay and coupling capacitance, Effects of reducing parasitic effects and shortening lead paths

Inactive Publication Date: 2006-08-23
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the thin film resistors are located far from the transistor devices, the leads are often quite complex and lengthy, which increases the interconnection delay of any type of typical circuit such as amplifier circuits and resonator circuits

Method used

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  • Method for manufacturing metal insulator metal capacitor and resistor at the same gradation
  • Method for manufacturing metal insulator metal capacitor and resistor at the same gradation
  • Method for manufacturing metal insulator metal capacitor and resistor at the same gradation

Examples

Experimental program
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Effect test

Embodiment Construction

[0044] Figures 1 to 10 A method for fabricating a MIMCAP capacitor CAP)) formed of sequential metal, insulator, metal MIM) layers and a thin film resistor at the same level is shown.

[0045] figure 1 The structure shown, which can be at any via layer, and preferably at the lowermost metal layer M1), after the step of depositing an oxide insulating layer 10, for example, 300 Å thick, on top of the oxide insulating layer is subsequently deposited such as TaN. A metal layer 12 thus forms the bottom electrode of the capacitor and a dielectric layer 14 such as tantalum pentoxide, silicon nitride or silicon dioxide is then deposited on top of the metal layer to form the capacitor dielectric. The vias Vx are shown as in the typical circuit.

[0046] figure 2 The structure is shown after the step of photolithographically patterning and etching the dielectric 20 and bottom electrode 22 of the capacitor.

[0047] image 3 The structure is shown after the steps of depositing a me...

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Abstract

A method is disclosed of fabricating a MIMCAP (a capacitor (CAP) formed by successive layers of metal, insulator, metal (MIM)) and a thin film resistor at the same level. A method is also disclosed of fabricating a MIMCAP and a thin film resistor at the same level, and a novel integration scheme for BEOL (back-end-of-line processing) thin film resistors which positions them closer to FEOL (front-end-of-line processing) devices.

Description

technical field [0001] The present invention generally relates to a method of fabricating MIMCAP capacitors) and thin film resistors formed of sequential metal, insulator, metal (MIM) layers at the same level. The present invention also relates to a method of manufacturing MIMCAP and thin film resistors at the same level, and a novel integration scheme (integration scheme) for BEOLback-end-of-line process (BEOLback-end-of-line process) thin film resistors, which enables These thin film resistors are located closer to the FEOL front-end-of-line process: front-end process) devices. Background technique [0002] In the prior art, thin film resistors are currently incorporated into BEOL (back-end-of-line process) levels, usually between MXM1 / MT) metal levels or at thick interconnect levels, where MX stands for any metal layer. Since the thin film resistors are located far from the transistor devices, the wiring is often quite complex and lengthy, which increases the interconnec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/70H01L21/3205H01L21/768H01C7/00H01G4/33H01L21/02H01L21/822H01L23/52H01L23/522H01L27/04H01L27/08
CPCY10S438/97H01L27/0802H01L28/20H01L23/5223H01L28/40H01L27/0805H01L2924/0002Y10T29/49155Y10T29/49082H01L2924/00
Inventor 阿尼尔·K·钦萨金迪郑淑珍迈克尔·F·洛法罗克里斯托弗·M·施纳贝尔肯尼思·J·斯坦
Owner GLOBALFOUNDRIES INC
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