Gate oxide integrity testing structure and gate oxide integrity testing method

Abstract

The invention discloses a gate oxide integrity testing structure and a gate oxide integrity testing method. The gate oxide integrity testing structure comprises a substrate, a plurality of testing units, a first contact plug and a second contact plug, wherein the substrate is provided with an isolation structure and an active area limited by the isolation structure; the testing units are arranged in the active area at intervals, each testing unit comprises a transistor which comprises a gate oxide layer, a gate electrode, a first test end and a second test end, the gate oxide layers are positioned on the substrate, the gate electrodes are positioned on the gate oxide layers, and the first test ends and the second test ends are arranged at two ends of the gate electrodes and extend to the positions above the isolation structure; the first contact plug is electrically connected with the first test ends in a contact manner; the second contact plug is electrically connected with the second test ends in a contact manner. The gate oxide integrity testing structure and the gate oxide integrity testing method solve the problem that an existing testing method is complex by utilizing a gate oxide integrity testing structure with a plurality of small-area testing units to test.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gate oxide layer integrity testing structure and testing method. Background technique [0002] In the manufacturing process of semiconductor devices, in order to monitor the manufacturing process and ensure the reliability of semiconductor devices, it is common practice to form a test structure (testkey) in the device for testing some key parameters. In the CMOS process, the gate oxide layer is an important structure in the device structure. The gate oxide layer should be an ideal dielectric layer without defects affecting its insulating properties. However, during the manufacturing process, such as ion diffusion invasion, charge capture, etc. Factors will affect the quality of the gate oxide layer. [0003] The Gate Oxide Integrity (GOI for short) test is a test process for verifying the quality of the gate oxide layer. In the manufacturing process of semiconductor de...

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Problems solved by technology

[0006] The problem to be solved by the present invention is: when using the existing gate oxide layer integrity testing structure comprising a plurality of small-area testing units for testing, the testing method is relatively complicated

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