Preparation method of copper zinc tin selenium thin film solar cell

A technology of copper-zinc-tin-selenium thin film and solar cells, which can be applied to circuits, photovoltaic power generation, electrical components, etc., can solve problems such as complex processes, and achieve the effects of simple process flow, high safety, and improved electrical performance

Active Publication Date: 2017-06-27
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the vacuum method, the selenization treatment after sputtering the metal pre-layer is commonly used. Both the electrochemical deposition and the selenization after sputtering must go through the selenization process, which requires two steps to complete, and the process is more complicated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of copper zinc tin selenium thin film solar cell
  • Preparation method of copper zinc tin selenium thin film solar cell
  • Preparation method of copper zinc tin selenium thin film solar cell

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0030] The preparation method of copper-zinc-tin-selenium thin-film solar cell is characterized in that it comprises the following steps:

[0031] Step 1. Put the side with the Mo back electrode on the substrate downward into the rotatable sample holder in the evaporation chamber, and place the substrate heater above the substrate; Cu, Zn, Sn, Se as evaporation sources Uniformly distributed around the bottom of the Mo back electrode of the substrate in the evaporation chamber, and an evaporation source baffle is placed on each evaporation source;

[0032] Step 2. Use a vacuum pump to evacuate the evaporation chamber to 10 -4 Pa, heat the substrate to 380°C, heat Cu in each evaporation source to 1100°C-1200°C, Zn to 280°C-380°C, Sn to 1000°C-1100°C, Se to 200°C-250°C , rotate the sample holder, open the evaporation source baffle above Zn, Sn, Se, co-evaporate Zn, Sn, Se on the Mo back electrode of the substrate, the evaporation time is 10min, deposit a layer of preset layer fi...

Embodiment 1

[0043] Adopt soda-lime glass as the substrate 3, deposit a 1 μm thick Mo back electrode 12 on the substrate by magnetron sputtering; prepare a copper-zinc-tin-selenium absorbing layer on the Mo back electrode; the copper-zinc-tin-selenium absorbing layer The preparation process is as follows: (1) Place the side of the substrate with the Mo back electrode down into such as figure 1 with figure 2 In the rotatable sample holder 4 of the evaporation chamber 1 shown; above the substrate is placed a substrate heater 2 composed of electric furnace wire coiled on a stainless steel tray; as the evaporation source, Cu, Zn, Sn, Se are evenly distributed In the periphery below the Mo back electrode in the evaporation chamber, each evaporation source is equipped with a thermocouple for monitoring the evaporation temperature, and each evaporation source is equipped with an evaporation source baffle 10; Vacuum to 10 -4 Pa, heat the substrate to 380°C; controlled by a thermocouple, heat th...

Embodiment 2

[0045] A stainless steel foil with a thickness of 40 μm was used as the substrate, and other conditions were the same as in Example 1 to prepare a copper-zinc-tin-selenium thin-film solar cell with a stainless steel substrate structure.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a Cu-Zn-Sn-Se thin film solar cell preparation method. The method includes the steps that 1, in a vacuum evaporation chamber, a Cu evaporation source, a Zn evaporation source, a Sn evaporation source and a Se evaporation source are distributed on a Mo back electrode of a substrate; 2, Zn, Sn and Se co-evaporation is conducted on the Mo back electrode, and a preset layer thin film is formed; 3, Cu and Se co-evaporation is conducted, and a Cu-rich absorbing layer thin film is formed; 4, Zn, Sn and Se co-evaporation is conducted, and a Cu-poor absorbing layer thin film is formed on the Mo back electrode; 5, the substrate is cooled sequentially in the Sn atmosphere and the Se atmosphere and then cooled in the Se atmosphere, and a Cu-Zn-Sn-Se thin film absorbing layer is formed; 6, a CdS buffering layer, an intrinsic-i-ZnO layer, a transparent conductive thin film window layer and metal gate electrodes are sequentially prepared on the Cu-Zn-Sn-Se thin film absorbing layer. According to the method, the Cu-Zn-Sn-Se solar cell absorbing layer thin film is prepared through multi-source co-evaporation, the preparation process is achieved in the vacuum evaporation chamber at a time, the post-processing process of selenylation is not needed, and the technological process is simpler and more convenient.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cell production, and in particular relates to a method for preparing a copper-zinc-tin-selenium thin-film solar cell. Background technique [0002] With the rapid development of the world economy and industry, human demand for energy is also increasing year by year. However, the non-renewable fossil energy reserves, which are the main source of energy, are constantly being consumed and reduced, and have brought serious environmental pollution and ecological damage. In this context, solar energy, as an important part of new energy, has attracted widespread attention due to its advantages of being renewable, non-polluting, and widely used, and the research and utilization of solar cells is one of the most valued areas. [0003] Among many solar cell materials, copper indium gallium selenide (CIGS) thin film materials have the characteristics of high conversion efficiency, good long-term sta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/0326H01L31/18Y02E10/50Y02P70/50
Inventor 杨亦桐王胜利李微杨立赵彦民乔在祥
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap