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pvd degassing heating chamber

A gas heating and heating device technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of temperature superposition, uneven temperature, untimely cooling and heat dissipation, etc., to reduce temperature superposition, avoid Passive heat source, fast heating effect

Active Publication Date: 2017-06-06
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the production process, the heating uniformity of the degassing process is very high. If the heating is uneven, some volatile impurities may not be removed cleanly, which will affect the subsequent process. Severe local temperature unevenness may even cause debris
[0004] Other components arranged in the existing PVD degassing heating chamber will become passive heat sources after being heated, and due to untimely cooling and heat dissipation, the temperature will be superimposed

Method used

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Embodiment approach

[0066] As a possible implementation manner, the supporting device includes a supporting frame 314 and a fixing rod 501 .

[0067] As a possible implementation manner, the first reflective plate 302 , the second reflective plate 313 and the third reflective plate 316 are all made of mirror material.

[0068] As a possible implementation manner, the first reflector 302 , the second reflector 313 and the third reflector 316 are all made of mirror stainless steel.

[0069] Please combine Figure 4 As shown, it is a partial top view schematic diagram of the use state of the supporting device of the PVD degassing heating chamber of the present invention. The fixing rod 501 is rod-shaped, one end of which is fixed on the first sealing cover 318, and the other end is equipped with a supporting frame 314. The sheet 401 is placed on the support frame 314 .

[0070] In this embodiment, in order to ensure firm fixing, the supporting device is provided with three fixing rods 501 . The s...

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Abstract

The invention relates to a PVD degassing heating cavity which comprises a cavity body, a plurality of reflecting plates, a support device, a heating device and a cooling device, wherein the cavity body has a shielding function and comprises side walls, a first sealing cover and a second sealing cover; the side walls form a hollow cylinder in a surrounding manner; the first sealing cover and the second sealing cover are respectively arranged on openings at two ends of the hollow cylinder so as to form the cavity in the surrounding manner; the reflecting plates are arranged on the inner wall of the cavity; the plurality of the reflecting plates are respectively arranged on the side walls, the first sealing cover and the second sealing cover; the support device is arranged inside the cavity and is fixed on the first sealing cover; the support device is used for bearing a base piece; the heating device is arranged inside the cavity and is fixed on the second sealing cover; the heating device is used for heating the base plate; the cooling device is filled with cooling water for rapid cooling. Therefore, the phenomena that the heating is not uniform and a passive heat source is generated can be avoided.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a degassing heating chamber for heating a substrate in a copper interconnection PVD process. Background technique [0002] In the prior art, see figure 1 as shown, figure 1 The flow chart of the PVD (Physical Vapor Deposition, physical vapor deposition) process of the present invention, the copper interconnection PVD process mainly includes four processes: degassing, pre-cleaning, Ta(N) deposition, and Cu deposition. [0003] In the PVD degassing heating chamber (Degas), the main process is to heat the substrate to a certain temperature to remove the water vapor and other volatile impurities adsorbed on the substrate. In the production process, the heating uniformity of the degassing process is highly required. If the heating is uneven, some volatile impurities may not be removed cleanly, which will affect the subsequent process. Severe local temperature unevenness may even cause ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/22
Inventor 刘红义
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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