Plasma processing device, electrostatic chuck, and manufacturing method of electrostatic chuck

Abstract

The invention discloses an electrostatic chuck, a manufacture method for the electrostatic chuck and an applied plasma-processing device; the electrostatic chuck comprises an insulation layer and a thermal insulating layer positioned below the insulation layer. Material with lesser heat transfer coefficient is used as thermal insulating layer and arranged between a heating device and a base for effectively reducing conducting rate of heat generated by the heating device towards the base and conveniently forming larger temperature gradient between the electrostatic chuck and the base, and maintaining normal plasma-processing technology for a substrate above the electrostatic chuck; considering smaller thickness of the thermal insulating layer manufactured by the thermal spraying process, two layers of thermal insulating layers are respectively sprayed below the insulation layer and above the substrate and are bonded and fixed through an adhesive Layer, and the temperature gradient between the electrostatic chuck and the base can be preferably improved.

Description

technical field [0001] The invention relates to the technical field of plasma processing, in particular to the technical field of an electrostatic chuck and its manufacture. Background technique [0002] During the plasma treatment process, an Electro Static Chuck (ESC for short) is often used to fix, support and transport the substrate (Wafer) waiting to be processed. The electrostatic chuck is set in the reaction chamber, which uses electrostatic attraction instead of mechanical means to fix the substrate, which can reduce the possible mechanical loss of the substrate, and make the electrostatic chuck and the substrate completely contact, which is conducive to heat conduction . During the reaction process, the reaction gas is introduced into the reaction chamber, and radio frequency power is applied to the reaction chamber. Usually, the radio frequency power is applied to the conductor base under the electrostatic chuck. The radio frequency power mainly includes the radio...

AI Technical Summary

Problems solved by technology

[0004] In order to facilitate the heating of the substrate, the heating device is usually installed inside the heat conduction layer with good thermal conductivity. At this time, the heat conduction layer is in contact with the base at the same time, and the water cooling structure inside the base can easily reduce the temperature raised by the heating device. , so that the heat of the heating device cannot be transferred to the substrate in time, resulting in a too small temperature gradient between the heating device and the water-cooled structure of the base, which is not conducive to the smooth progress of the process

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