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Method of Manufacturing a Semiconductor Device with Buried Channel/Body Zone and Semiconductor Device

A technology of semiconductor and channel region, applied in semiconductor/solid state device manufacturing, semiconductor device, electric solid state device, etc., can solve problems such as increasing on-resistance

Inactive Publication Date: 2015-07-01
INFINEON TECH DRESDEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Increasing the length of the drift region increases the voltage blocking capability, but at the same time increases the on-resistance

Method used

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  • Method of Manufacturing a Semiconductor Device with Buried Channel/Body Zone and Semiconductor Device
  • Method of Manufacturing a Semiconductor Device with Buried Channel/Body Zone and Semiconductor Device
  • Method of Manufacturing a Semiconductor Device with Buried Channel/Body Zone and Semiconductor Device

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Embodiment Construction

[0021] The following detailed description refers to the accompanying drawings, which form a part hereof, and which show by way of illustration specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. For example, features illustrative or described of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. The present invention is intended to cover such modifications and variations. The examples are described using specific language which should not be construed as limiting the scope of the appending claims. The drawings are not necessarily to scale and are for illustration purposes only. For the sake of clarity, identical elements in the different drawings have been designated with corresponding reference numerals, unless otherwise stated.

[0022] The ter...

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PUM

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Abstract

A semiconductor device includes a source zone of a first conductivity type formed in a first electrode fin that extends from a first surface into a semiconductor portion. A drain region of the first conductivity type is formed in a second electrode fin that extends from the first surface into the semiconductor portion. A channel / body zone is formed in a transistor fin that extends between the first and second electrode fins at a distance to the first surface. The first and second electrode fins extend along a first lateral direction. A width of first gate sections, which are arranged on opposing sides of the transistor fin, along a second lateral direction perpendicular to the first lateral direction is greater than a distance between the first and second electrode fins.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor device with a buried channel region / body region and a manufacturing method thereof. Background technique [0002] Power semiconductor devices generally include a drift region between a channel / body region and a drain region which are voltage controlled. Increasing the length of the drift region increases the voltage blocking capability, but at the same time increases the on-resistance. The idea of ​​FET (Field Effect Transistor) is like ADZFET (Active Drift Zone FET) where two or more Field Effect Transistors are arranged in series in the same semiconductor die to combine low on-resistance with high blocking capability. In a vertical ADZFET, the load current through two or more transistor components flows in a substantially vertical direction with respect to the main surface of the ADZFET semiconductor die. There is an urgent need to provide a semiconductor device ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/10H01L21/336
CPCH01L21/823418H01L27/0886H01L21/8236H01L21/823412H01L27/0883H01L21/823431H01L29/06H01L29/4232H01L29/42372H01L29/66477H01L29/66795H01L29/78H01L29/785H01L21/30608H01L21/308
Inventor S·特根M·勒姆克R·威斯
Owner INFINEON TECH DRESDEN