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GaN power device drain electrode modulation circuit

A power device and drain modulation technology, applied in the direction of power amplifiers, etc., can solve the problem of modulation device gate-source voltage limiting power device discharge circuit design, modulation device driving ability, etc., to achieve rapid discharge, logic control safety, and circuit design simple effect

Active Publication Date: 2015-07-22
南京国博电子股份有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, GaN power amplifier devices have just started in China, and its drain modulation circuit is also in the initial stage of research. The main difficulties lie in the gate-source voltage limitation of the modulation device, the design of the discharge circuit after the power device is turned off, and the drive of the modulation device itself. ability

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  • GaN power device drain electrode modulation circuit
  • GaN power device drain electrode modulation circuit
  • GaN power device drain electrode modulation circuit

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Embodiment Construction

[0017] The technical solution of the present invention will be further elaborated below in conjunction with the accompanying drawings.

[0018] The total circuit block diagram of the present invention is as figure 1 As shown, it includes a modulation switch tube gate drive circuit 1, a modulation switch tube 2, a voltage divider comparison network 3, a dead time control logic circuit 4, a discharge switch tube gate drive circuit 5, a discharge switch tube 6 and a power device 7. The modulated input signal is from one end of the modulated switching tube gate drive circuit 1 ( figure 1 middle point A) input, the modulated drive signal is formed after the grid drive circuit 1 of the modulated switch tube and sent to the gate of the modulated switch tube 2, the drain of the modulated switch tube 2 is connected to one end of the power device 7, the discharge switch tube 6 The drain and the input terminal of the voltage divider comparison network 3 are connected ( figure 1 at poin...

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Abstract

The invention discloses a GaN power device drain electrode modulation circuit which comprises a modulation switch tube gate driving circuit, a modulation switch tube, a differential voltage comparing network, a dead-time control logic circuit, a discharging switch tube gate driving circuit, a discharging switch tube and a power device. Through the modulation switch tube gate driving circuit and the modulation switch tube, charging and discharging of a power amplifier can be controlled, and the function of drain electrode modulation is achieved. Through the discharging switch tube gate driving circuit and the discharging switch tube, quick discharging of the power device can be achieved. Through the differential voltage comparing network and the dead-time control logic circuit, simultaneous connection of the modulation switch tube and the discharging switch tube can be avoided. In addition, a modulation output signal rising edge and lowering edge are short in time, driving capacity is high, logic control is safe, and circuit design is simple.

Description

technical field [0001] The invention relates to a power device modulation circuit, in particular to a GaN power device drain modulation circuit. Background technique [0002] The power device is the most important component in the T / R module, and the power modulation circuit that controls its pulse operation is also an indispensable circuit structure. Its performance has an extremely important impact on the transmitting branch of the T / R module. Due to the low working voltage of the power amplifier device of GaAs process, its modulation circuit is relatively easy to implement and its technical structure is already mature. Compared with the traditional low-voltage modulation circuit, the GaN power device drain modulation circuit improves the withstand voltage requirement of the modulated switch tube drain-source voltage. However, GaN power amplifier devices have just started in China, and its drain modulation circuit is also in the initial stage of research. The main difficu...

Claims

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Application Information

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IPC IPC(8): H03F3/20
Inventor 陈晓青张福龙张文超
Owner 南京国博电子股份有限公司
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