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Temperature-independent cmos RF power detector

A power detector and radio frequency technology, applied in a complementary metal oxide semiconductor RF power detector, including a kind of RF power, in an embodiment, the present invention generally relates to the field of radio frequency power detectors

Active Publication Date: 2017-10-10
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this solution may require extensive testing of the RF power detector after it is manufactured and the additional task of computing and storing offset coefficients so that these coefficients are associated with a suitable RF power detector

Method used

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  • Temperature-independent cmos RF power detector
  • Temperature-independent cmos RF power detector
  • Temperature-independent cmos RF power detector

Examples

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Embodiment Construction

[0019] It should be understood at the outset that although an illustrative implementation of one or more embodiments is provided below, the disclosed systems and / or methods may be implemented using any number of currently known or available techniques. The invention should in no way be limited to the illustrative implementations, drawings, and techniques illustrated below, including the exemplary designs and implementations illustrated and described herein, but may be limited within the scope of the appended claims and their equivalents. Modify within the complete scope of the object.

[0020] With the development of wireless RF communication systems, the number of handheld devices and base stations worldwide has increased dramatically. With the development of communication electronics, the power consumption of both base stations and handheld devices has increased. As the use or expansion of wireless technology in all aspects of our world will not decrease, the issue of power...

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Abstract

A power detector circuit includes a first portion for receiving a radio frequency (RF) input signal and generating a first voltage, wherein the first voltage includes a voltage proportional to a mean square of the RF input signal and the first portion a summation of voltage characteristics, said first voltage being an input to a third portion; a second portion for generating a second voltage, wherein said second voltage includes an output voltage and a sum of said voltage characteristics of said first portion a combination of proportional voltages, said output voltage being proportional to a root mean square of said RF input signal; and said third portion for generating said output voltage by combining said first voltage and said second voltage, wherein The second section creates a negative feedback loop for the third section, and the output voltage generated by the third section is the output of the power detector circuit.

Description

[0001] Related Applications Cross Application [0002] This application claims a prior application to U.S. Non-provisional Application No. 13 / 731,815, filed December 31, 2012, entitled "A Temperature Independent CMOS Radio Frequency Power Detector" Priority, the content of this earlier application is incorporated herein by reference. [0003] About Sponsored by the Federal Government [0004] Statement of Research or Development [0005] Not applicable. [0006] Refer to Microfiche Addendum [0007] Not applicable. Background technique [0008] The present invention relates generally to radio frequency (RF) power detectors, and more particularly, to complementary metal oxide semiconductor (CMOS) RF power detectors. RF power detectors may be used in wireless RF communication systems to monitor the output power of an RF transmitter and / or the input power of an RF receiver. The RF detector can generate a voltage signal indicative of the power of the RF signal. RF power det...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/02H03F3/24
CPCH04B17/318H03F1/0272H03F3/24H03F1/301H03F1/302H03F1/342H03F2200/105H03F2200/42H03F2200/451H03F2200/75G01R21/12G01R21/14H03F3/19H03F2200/228H03F2200/447H03F2200/465H03F2200/471G01R21/10
Inventor 埃里克·宋
Owner HUAWEI TECH CO LTD
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