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Wafer deep groove etching method

A wafer and deep groove technology, used in decorative arts, gaseous chemical plating, microstructure technology, etc.

Active Publication Date: 2017-10-27
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, MEMS products (micro-electromechanical system products) require deep groove etching of 400um on the wafer, and the thickness of the wafer after etching can only be about 10um, which may be corroded. It will result in failure to transmit or drop

Method used

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Embodiment Construction

[0018] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0019] In order to provide a thorough understanding of the present invention, the detailed structure will be set forth in the following description. It is evident that the practice of the invention is not limited to specific details familiar to those skilled in the art. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.

[0020] The invention discloses a wafer fixture, the structure of which is as follows figure 1 As shown, it includes a p...

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Abstract

The invention discloses a wafer fixture and a wafer deep groove etching method. The wafer fixture includes a peripheral retaining ring, a horizontal pallet is connected to the inner surface of the peripheral retaining ring, and a positioning plane is arranged on the inner surface of the peripheral retaining ring above the horizontal pallet. According to the wafer fixture of the present invention, the structure is adapted to the shape of the wafer, and can be processed according to the size of the wafer, so that it can be applied to wafers of different specifications, and provides a place for deep etching of the wafer. The round place helps to ensure the smooth progress of deep corrosion. After using the wafer deep groove etching method of the present invention to carry out deep groove etching on the wafer, the whole temporarily formed by the wafer and the companion piece through the photoresist has sufficient thickness, and the transfer arm will not absorb the wafer when it is transported by vacuum. Transfer the dropped wafers, so as to successfully complete the transfer of the wafers, thereby ensuring the smooth progress of production.

Description

technical field [0001] The invention relates to the technical field of wafer deep groove etching, in particular to a wafer fixture and a wafer deep groove etching method. Background technique [0002] Corrosion generally uses various gases (SF 6 , Cl 2 etc.) or chemical liquid (H 2 SO 4 , HF, etc.) for isotropic and anisotropic etching, in Si / SiO 2 / SiN / Al and other media to etch out the graphics required by the process. Corrosion of online products is generally only corrosion within 2um thickness, which is very small compared to 675um wafer thickness, and the transmission will not be affected after corrosion. However, MEMS products (micro-electromechanical system products) require deep groove etching of 400um on the wafer, and the thickness of the wafer after etching can only be about 10um, which may be corroded. It will result in failure to transmit or drop the film. [0003] Therefore, there is a need for a wafer fixture and a wafer deep trench etching method to at...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/687H01L21/306B81C1/00
Inventor 徐春云徐振宇
Owner CSMC TECH FAB2 CO LTD
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