Ultraviolet detector based on surface acoustic wave enhancement and its preparation method

An ultraviolet detector and surface acoustic wave technology, applied in the field of ultraviolet detection, can solve the problems of inability to diffuse carriers, low responsivity of ultraviolet detectors, and inability to convert into electrical signals, so as to improve photoelectric conversion efficiency and effective illumination Effect of area, high sensitivity

Active Publication Date: 2017-10-03
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Claims
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AI Technical Summary

Problems solved by technology

When the minority carrier diffusion length is small, a part of the carriers cannot diffuse to the built-in electric field area and be recombined, and cannot be converted into electrical signals
These problems lead to the low responsivity of MSM structure UV detectors

Method used

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  • Ultraviolet detector based on surface acoustic wave enhancement and its preparation method
  • Ultraviolet detector based on surface acoustic wave enhancement and its preparation method

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Embodiment Construction

[0022] The specific implementation of the surface acoustic wave-enhanced ultraviolet detector and its preparation method provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0023] figure 1 Shown is a schematic structural view of the surface acoustic wave enhanced ultraviolet detector provided by the present invention. see figure 1 The ultraviolet detector based on surface acoustic wave enhancement of the present invention includes a semiconductor substrate 1, two back-to-back Schottky electrodes 2 arranged on the surface of the semiconductor substrate 1, and an interdigital transducer 3 arranged on the surface of the semiconductor substrate.

[0024] The semiconductor substrate 1 is a wide bandgap polar semiconductor substrate. The material is selected from one of III-V group compounds and II-VI group compounds. Preferably, one selected from GaN, AlN, AlGaN, ZnO.

[0025] The two back-to-back Schottky electrode...

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Abstract

The invention provides an ultraviolet detector based on surface acoustic wave enhancing and a preparation method thereof. The ultraviolet detector based on surface acoustic wave enhancing comprises a semiconductor substrate and two back-to-back Schottky electrodes which are arranged on the surface of the semiconductor substrate and used for collecting photon-generated carriers and forming and outputting electrical signals. The ultraviolet detector further comprises an inter-digital transducer which is arranged on the surface of the semiconductor substrate and used for exciting surface acoustic waves to realize transport of the photon-generated carrier through the surface acoustic waves. The ultraviolet detector of the invention has the advantage that photon-generated carriers are captured and directionally transported by surface acoustic waves, distant photon-generated carriers can be transferred to a built-in electric field region of a Schottky electrode structure, recombination of photon-generated carriers is reduced, the efficiency of photoelectric conversion is improved, and a high-sensitive ultraviolet detection function is achieved.

Description

technical field [0001] The invention relates to the technical field of ultraviolet detection, in particular to an ultraviolet detector based on surface acoustic wave enhancement and a preparation method thereof. Background technique [0002] Ultraviolet detection technology has a wide range of applications in both military and civilian fields. At present, the more commonly used commercial ultraviolet detectors are mainly vacuum ultraviolet photomultiplier tubes and silicon-based ultraviolet photodiodes. However, the photomultiplier tube needs to work under high voltage, and has the disadvantages of large imaging system size, high power consumption and high cost, which limits its wide application. Although the development of silicon-based ultraviolet photodiodes is mature, due to the small band gap of silicon, filters must be equipped to achieve selective detection of ultraviolet bands; due to the use of filters, the volume of the system and the complexity of manufacturing a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/11H01L31/02H01L31/0224H01L31/18
CPCH01L31/02H01L31/022408H01L31/11H01L31/18Y02P70/50
Inventor 樊英民钟海舰刘争晖徐耿钊黄增立徐科
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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