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Method for purifying trichlorosilane

A technology of trichlorosilane and purity, which is applied in the direction of halosilane and silicon halide compounds, and can solve problems such as difficult to remove, explosion, and easy to cause fire

Inactive Publication Date: 2017-03-08
GUODIAN INNER MONGOLIA JINGYANG ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, more than 70% of polysilicon in the world is produced by the improved Siemens method. In the improved Siemens method, trichlorosilane is the main raw material for producing polysilicon, so the content of impurities in polysilicon depends on the raw material trichlorosilane. The content of impurities; in this production process, the impurities in trichlorosilane are all removed by rectification; for some impurities, such as iron, copper, manganese, etc., can be completely removed by rectification, but due to the The properties are similar to those of trichlorosilane, and the dispersion coefficient in it is close to 1, so it is difficult to remove
[0004] At present, the method of removing phosphorus and boron in domestic enterprises is mainly realized by increasing the number of rectification tower stages and the number of trays. bad
[0005] Some companies at home and abroad try to use adsorption to remove trace phosphorus and boron impurities in trichlorosilane, and there are many research reports in this field in recent years; but most of the successful reports on this direction are concentrated in laboratory micro-tests In large-scale industrial production, the removal effect of phosphorus and boron is not good, and it is easy to cause safety accidents such as fire or explosion.

Method used

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  • Method for purifying trichlorosilane
  • Method for purifying trichlorosilane
  • Method for purifying trichlorosilane

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Experimental program
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Effect test

Embodiment 1

[0038] The purity of the trichlorosilane to be purified is 99.99%, the boron impurity is 2.05ppbw, the phosphorus impurity is 2.04ppbw, and the temperature is about 70 degrees Celsius. Such as figure 2 As shown, the trichlorosilane (TCS) to be purified stored in the tank area is cooled to about 30 degrees Celsius in the cooler 1, and then sent to the adsorption tower 2 equipped with a weakly basic polymer resin, after being adsorbed by the adsorption resin , reduce the impurity content of boron and phosphorus in the material, and obtain the refined trichlorosilane product. The trichlorosilane coming out of the adsorption column enters the adsorption product buffer tank 3 and is pumped into the refining tower. The working pressure in the adsorption tower is 0.25-0.4MPaG, the single-column flow rate of the adsorption column is 2.3-3.45t / h, and the operating temperature is lower than 35 degrees Celsius.

[0039] The boron content in the obtained refined trichlorosilane product...

Embodiment 2

[0041] The purity of the trichlorosilane to be purified is 99.99%, the boron impurity is 2.85ppbw, the phosphorus impurity is 2.15ppbw, and the temperature is about 65 degrees Celsius. Such as figure 2 As shown, the trichlorosilane (TCS) to be purified stored in the tank area is cooled to about 30 degrees Celsius in the cooler 1, and then sent into the adsorption tower equipped with weakly basic polymer resin, after being adsorbed by the adsorption resin, The impurity content of boron and phosphorus in the material is reduced to obtain a refined trichlorosilane product. The trichlorosilane coming out of the adsorption column 2 enters the adsorption product buffer tank 3 and is pumped into the refining tower. The working pressure in the adsorption tower is 0.25-0.4MPaG, the single-column flow rate of the adsorption column is 2.3-3.45t / h, and the operating temperature is lower than 35 degrees Celsius.

[0042] The boron content in the obtained refined trichlorosilane product ...

Embodiment 3

[0044] The purity of the trichlorosilane to be purified is 99.99%, the boron impurity is 2.25ppbw, the phosphorus impurity is 1.14ppbw, and the temperature is about 67 degrees Celsius. Such as figure 2 As shown, the trichlorosilane (TCS) to be purified stored in the tank area is cooled to about 30 degrees Celsius in the cooler 1, and then sent into the adsorption tower equipped with weakly basic polymer resin, after being adsorbed by the adsorption resin, The impurity content of boron and phosphorus in the material is reduced to obtain a refined trichlorosilane product. The trichlorosilane coming out of the adsorption column 2 enters the adsorption product buffer tank 3 and is pumped into the refining tower. The working pressure in the adsorption tower is 0.25-0.4MPaG, the single-column flow rate of the adsorption column is 2.3-3.45t / h, and the operating temperature is lower than 35 degrees Celsius.

[0045] The boron content in the obtained refined trichlorosilane product ...

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Abstract

The invention provides a method for purifying trichlorosilane. The method comprises the following steps: cooling trichlorosilane to obtain cooled trichlorosilane; and performing adsorption treatment on the cooled trichlorosilane in an adsorption tower to adsorb boron and phosphorus, thereby obtaining refined trichlorosilane, wherein alkalescent polymerized resin is filled in the adsorption tower. By using the method, a slight trace of boron and phosphorus impurities in trichlorosilane are removed at the same time to improve the quality of trichlorosilane. The method is simple and feasible, low in cost and good in impurity removal effect.

Description

technical field [0001] The invention belongs to the field of polysilicon, in particular, the invention relates to a method for purifying trichlorosilane. Background technique [0002] The purity of solar-grade silicon materials directly affects the conversion rate of solar cells, and the impact of impurities boron and phosphorus is particularly prominent. When sunlight shines on the P-N junction, photons with energy greater than the forbidden band width are absorbed by the semiconductor, and electrons are excited to generate non-equilibrium carriers- For electrons and holes, due to the photoelectromotive force formed by the built-in electrostatic field of P-N, the carriers will recombine due to the defects of impurities during the transfer process. The outermost layer of boron has 3 electrons, and it is easy to absorb an electron. The outermost layer of phosphorus has 5 electrons, and it is easy to form holes. Boron and phosphorus have a strong recombination effect on carrie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107
Inventor 姚国华张艳春李锋王洪光白竟超彭述才
Owner GUODIAN INNER MONGOLIA JINGYANG ENERGY
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