Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Crystal pulling method of semiconductor crystal bar

A semiconductor and crystal rod technology, applied in the field of semiconductor production, can solve the problems affecting the cooling efficiency of semiconductor refrigeration parts, poor crystal rod quality, etc., and achieve the effect of high cooling efficiency and good crystal rod quality.

Inactive Publication Date: 2015-08-12
HENAN HONGCHANG ELECTRONICS
View PDF15 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, crystal ingots are produced on a crystal pulling furnace. The crystal pulling furnace has a heating ring. The temperature of crystal pulling is 280-320°C, and it is completed at one time. The crystal ingots produced in this way have the disadvantage of poor quality. , which further affects the cooling efficiency of semiconductor refrigeration components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] a. Pull the original crystal ingot (the crystal ingot that has not been pulled, the same below) at 280°C for the first time to make a crystal ingot.

[0018] The ingot was made into a refrigerating part of 6 cm x 6 cm, and a 12V direct current was passed through the refrigerating part for 2 minutes, and the temperature difference between its two sides was 5.1°C.

Embodiment 2

[0020] a. Perform the first crystal pulling on the original crystal rod at 320° C. to make a crystal pulling rod.

[0021] The ingot was made into a refrigerating part of 6cm x 6cm, and the temperature difference between the two sides of the refrigerating part was 5.2°C when a 12V direct current was passed through the refrigerating part for 2 minutes.

Embodiment 3

[0023] a. Perform the first crystal pulling on the original crystal rod at 280°C;

[0024] b. After the ingot is cooled to 30°C, the second crystal pull is performed, and the second crystal pull is performed when the temperature of the second crystal pull is 300°C.

[0025] The ingot was made into a refrigerating part of 6cm x 6cm, and a 12V direct current was passed through the refrigerating part for 2 minutes, and the temperature difference between its two sides was 6.5°C.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of semiconductor production, and relates to a crystal pulling method of semiconductor crystal bar. The crystal bars are pulled in a crystal pulling furnace. The crystal pulling method comprises the following steps: step a, pulling a crystal bar at a temperature of 280 to 320 DEG C for the first time; step b, cooling the crystal bar to a temperature of 30 to 40 DEG C, and then pulling the crystal bar for a second time at a temperature of 300 to 340 DEG C; step c, cooling the crystal bar to a temperature of 30 to 40 DEG C, and pulling the crystal bar for a third time at a temperature of 280 to 320 DEG C; wherein the crystal bar is pulled under a vibration of 1 millimeter and a frequency of 30 Hz. The provided crystal pulling method has the advantages that the crystal bar quality is better and the semiconductor refrigerating unit prepared from the crystal bars has higher refrigerating efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductor production, in particular to a crystal pulling method for semiconductor crystal rods. Background technique [0002] The main raw material of the ingot is bismuth tritelluride. These raw materials undergo high temperature in the crystal pulling tube to form a crystal ingot with neat molecular arrangement. The process of rearranging the molecules of the raw material at high temperature is crystal pulling. Wire cutting produces semiconductor crystal grains, and then the crystal grains are welded on the porcelain plate to manufacture semiconductor refrigeration parts. [0003] The orderliness of the grain arrangement determines the efficiency of the semiconductor refrigeration unit. The more orderly the raw material molecules are arranged, the higher the cooling efficiency of the semiconductor refrigeration unit. On the contrary, the more chaotic the arrangement of the raw material molecules, th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B15/00
Inventor 陈磊刘栓红赵丽萍张文涛蔡水占郭晶晶张会超陈永平王东胜惠小青辛世明田红丽
Owner HENAN HONGCHANG ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com