Crystal pulling method for crystal bar

The technology of crystal rod and crystal pulling furnace is applied in the field of crystal rod pulling, which can solve the problems of poor crystal rod quality and affect the refrigeration efficiency of semiconductor refrigeration parts, and achieves good crystal rod quality, low breakage rate and easy realization. Effect

Inactive Publication Date: 2015-08-05
HENAN HONGCHANG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, crystal ingots are produced on a crystal pulling furnace. The crystal pulling furnace has a heating ring. The temperature of crystal pulling is 280-320°C, and it is

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] a. Perform the first crystal pulling on the original crystal rod (the crystal rod that has not been pulled, the same below) at 300°C to make the first crystal rod.

[0019] The ingot was made into a 10cm×10cm cooling piece, and the cooling piece passed 12V direct current for 2 minutes, the temperature difference on both sides was 7.1°C, and the breakage rate was 18% when the crystal ingot was processed into crystal grains.

Embodiment 2

[0021] The crystal ingot is pulled under the following conditions:

[0022] a. Raise the temperature of the raw ingot to 280°C within 30 minutes and keep it there for 10 minutes;

[0023] b. Cool the ingot in the above step a to 50° C. within 7 minutes to make the second crystal ingot.

[0024] The ingot was further processed into a 10cm×10cm cooling unit. The cooling unit passed 12V direct current for 2 minutes, and the temperature difference between its two sides was 9.1°C. When the ingot was processed into crystal grains, the breakage rate was 14%.

Embodiment 3

[0026] The crystal rod is pulled under the following conditions:

[0027] a. Raise the temperature of the ingot to 320°C within 40 minutes and keep it for 15 minutes;

[0028] b. Cool the ingot in the above step a to 60° C. within 9 minutes to make the third crystal ingot.

[0029] The ingot was made into a 10cm×10cm cooling piece, and the cooling piece passed 12V direct current for 2 minutes, the temperature difference between the two sides was 9.8°C, and the breakage rate was 13% when the crystal ingot was processed into crystal grains.

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PUM

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Abstract

The invention relates to the technical field of refrigerating piece production, in particular to a crystal pulling method for a crystal bar. The crystal bar is subjected to crystal pulling in a crystal pulling furnace. The crystal pulling method includes the steps of a, heating the crystal bar to 280-320 DEG C within 30-40 minutes, and keeping the temperature for 10-15 minutes; b, cooling the crystal bar to 50-60 DEG C within 7-9 minutes; preferably, in the step a, the crystal bar is heated in a 10-12V/cm electric field one-millimeter in amplitude and 40-60 hertz in frequency. The crystal pulling method for the crystal bar has the advantages of better produced crystal bar quality, low breakage rate during crystal bar cutting and easiness in implementation.

Description

technical field [0001] The invention relates to the technical field of refrigerating parts production, in particular to a crystal pulling method for crystal rods. Background technique [0002] The main raw material of the ingot is bismuth tritelluride. These raw materials are placed in the crystal pulling tube, and after high temperature, the crystal ingot with molecular arrangement is formed. The process of rearranging the molecules at high temperature is crystal pulling, and the ingot after pulling the crystal Carry out wire cutting to generate semiconductor crystal grains, and then weld the crystal grains on the porcelain plate to manufacture semiconductor refrigeration parts. [0003] The orderliness of the grain arrangement determines the efficiency of the semiconductor refrigeration unit. The more orderly the raw material molecules are arranged, the higher the cooling efficiency of the semiconductor refrigeration unit. On the contrary, the more chaotic the arrangement ...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B30/02
Inventor 陈磊刘栓红赵丽萍张文涛蔡水占郭晶晶张会超陈永平王东胜惠小青辛世明田红丽
Owner HENAN HONGCHANG ELECTRONICS
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