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Semiconductor structure and manufacturing method thereof

A technology of semiconductors and conductive plugs, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., and can solve problems such as complex processes and material incompatibility

Active Publication Date: 2018-07-17
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, problems arise when integrating high-k / metal gate components in a CMOS technology process flow due to various factors such as material incompatibility, complex process, and thermal budget

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0035] In the following detailed description, numerous specific details are set forth in order to provide a fuller understanding of the present invention. However, it will be understood by those skilled in the art that the present invention may be practiced without these specific details. In other instances, well-known methods, procedures, components and circuits have not been described in detail so as not to obscure the present invention. It should be understood that the following summary provides a number of different embodiments or examples for implementing different features of various embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention.

[0036] Furthermore, it is to be understood that several processing steps and / or components of the device are only briefly described. Furthermore, additional process steps and / or features may ...

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Abstract

The invention provides semiconductor structure and its manufacturing methods.Semiconductor structures include substrate and metal gate.The metal grid includes the metal filling layer and set it above the substrate.The semiconductor structure also includes the dielectric materials above the metal filling layer and separate the metal fill layer from the conductive line.The conductive line is located above the dielectric material.The semiconductor structure also includes the conductive plugs that extends through the dielectric material and end the horizontal erosion part of the metal filling layer along the horizontal direction.The horizontal direction is basically perpendicular to the vertical direction of conductive plugs.

Description

technical field [0001] The present invention relates to semiconductor structures and methods of fabrication thereof. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid development. As the size of transistors decreases, as the gate length decreases, the thickness of the gate oxide must decrease to maintain performance. However, to reduce gate leakage, use a high dielectric constant (high-k) that allows for a larger physical thickness while maintaining the same effective thickness as provided by typical gate oxides for larger technology nodes. gate insulating layer. [0003] Additionally, during some IC designs, due to shrinking technology nodes, it is desirable to replace typical polysilicon gate electrodes with metal gate (MG) electrodes to improve device performance by reducing feature size. One process for forming the MG electrode is known as a "gate last" process that manufactures the final metal gate electrode "last"...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/28H01L23/48
CPCH01L21/02063H01L21/31116H01L21/31122H01L21/32134H01L29/513H01L21/76805H01L21/76814H01L21/76816H01L29/517H01L29/4966H01L29/66545H01L29/7812H01L29/7813H01L29/7851H01L29/66795
Inventor 陈建宏刘胜杰陈禾秉吴文朗崔成章
Owner TAIWAN SEMICON MFG CO LTD