Method for preparing quantum dot diaphragm

A manufacturing method, quantum dot film technology, applied to point light sources, components of lighting devices, optical elements used to change the spectral characteristics of emitted light, etc., can solve the disadvantages of liquid crystal display display, edge failure, and quantum dot failure and other issues to achieve the effect of improving the display effect and avoiding moisture and oxygen

Inactive Publication Date: 2015-08-19
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

However, because quantum dots are extremely susceptible to the influence of moisture and oxygen, the quantum dots on the edge of the quantum dot film 13 will fail when the edge of the quantum dot film 13 is immersed in moisture and oxygen. The quantum dot membrane 13 manufactured by the sheet method has an edge failure area, which is very unfavorable for the display of the liquid crystal display

Method used

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  • Method for preparing quantum dot diaphragm
  • Method for preparing quantum dot diaphragm
  • Method for preparing quantum dot diaphragm

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Embodiment Construction

[0023] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, the embodiments are provided to explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to particular intended uses. In the drawings, the thicknesses of layers and regions are exaggerated for clarity of devices, and the same reference numerals will be used to refer to the same elements throughout the specification and drawings.

[0024] figure 2 is a top view of a first substrate according to an embodiment of the present invention. Figure 3A It is a top view of applying edge sealant on the edge glue distribution area of ​​the first substr...

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Abstract

The invention discloses a method for preparing a quantum dot diaphragm. The method includes the steps that an edge sealing adhesive (32) is sprayed on an edge adhesive applying area (12) of a first substrate (10); quantum dot ink (34) is sprayed in an ink receiving area (14) located in the edge adhesive applying area (12); a second substrate is attached to the edge sealing adhesive (32) and the quantum dot ink (34); the edge sealing adhesive (32) and the quantum dot ink (34) are cured; cutting is conducted along the edge adhesive applying area (12), and therefore the quantum dot diaphragm is formed. According to the quantum dot diaphragm prepared through the method, due to the fact that the edge of the quantum dot diaphragm is sealed through the edge sealing adhesive, moisture and oxygen can be effectively prevented from being immersed into the quantum dot diaphragm, an edge failure area does not exist on the quantum dot diaphragm, and the display effect of a liquid crystal display is easily improved.

Description

technical field [0001] The invention relates to a method for manufacturing a quantum dot membrane. Background technique [0002] In an existing liquid crystal display (LCD), a white light emitting diode (LED) is usually used as a backlight source, and the backlight required by the liquid crystal display panel is realized through a reasonable combination of a light guide plate and an optical film. As people's requirements for high color gamut, high color saturation, and energy saving are getting higher and higher, the current schemes for realizing white light source, high color gamut, and high color saturation in backlight include: UV LEDs with RGB phosphors; blue LEDs with Red and green phosphors; blue LED plus green LED plus red LED, etc. These solutions can improve the color gamut, but it is difficult to implement and the cost is high. [0003] Quantum Dot (QD for short) technology is a semiconductor nanomaterial structure technology that confines electrons within a cert...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F21V9/16F21V31/00G02F1/13357F21Y101/02
CPCG02F1/133603G02F1/133614
Inventor 郑颖博
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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