Fixing device, reaction cavity and plasma processing device

Abstract

The invention provides a fixing device, a reaction cavity and a plasma processing device; the fixing device is used for fixing a processed workpiece on a bearing surface of a pedestal in the reaction cavity, and comprises a fixing annular plate positioned above the pedestal; an inner periphery wall of the fixing annular plate is provided with a plurality of fixing paws arranged on the periphery at intervals; the bottom surface of each fixing paw is stacked on an edge portion of the top surface of the processed workpiece on the bearing surface of the pedestal, thus fixing the processed workpiece on the bearing surface of the pedestal. The pedestal needs not to be lowered relative to the fixing device, and the processing area of the processed workpiece can be enlarged, thus satisfying later procedure needs and reducing processing difficulty of the later procedure, and ensuring technical stability.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to a fixing device, a reaction chamber and plasma processing equipment. Background technique [0002] Through Silicon Via (TSV for short) technology is currently the key technology to realize the miniaturization of electronic product packaging. In the subsequent packaging process, TSVPVD equipment is mainly used to deposit thin films in the TSV process, and because the processed workpieces for subsequent packaging processes are relatively thin, it is usually required to use a fixture to fix the processed workpieces on the carrier when depositing thin films. Machined on the upper surface of the base of the workpiece. [0003] figure 1 It is a cross-sectional view of the existing TSV PVD equipment. figure 2 for figure 1 Partial enlarged view of the middle I region. image 3 for figure 1 Top view of the fixture. Please also refer to figure 1 , ...

AI Technical Summary

Problems solved by technology

[0005] However, this has the following problem again, that is, since there is a vertical gap between the upper surface of the workpiece 101 and the lower surface of the fixed ring plate 104 after the base 102 is lowered by a predetermined distance relative to the fixed ring plate 104 , which causes the heat exchange medium flowing into the gap between the lower surface of the processed workpiece 101 and the bearing surface of the base 102 to leak into the reaction chamber 100 through the vertical gap, causing damage to the process in the reaction chamber 100 The environment has adverse effects, so that when the base 102 drops a predetermined distance relative to the fixed ring plate 104, it is necessary to stop heating the workpiece 101 by means of the heat exchange medium, resulting in the inability to control the temperature of the workpiece 101 to be processed, thereby reducing the quality of the process

In addition, the metal atoms in the plasma will also be sputtered to the area below the base 102 in the reaction chamber 100 through the vertical gap, which will cause damage to the electronic devices located in this area, and even electrons may appear. Problems with device connectivity due to deposition of metal atoms, with more serious consequences

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