Thermal Simulation Equivalent Model of Amplifier Chip and Its Heat Sink Based on Phemt
A thermal simulation equivalent and equivalent model technology, applied in the field of effective models, can solve the problems such as the inability to provide accurate die channel temperature, the high cost of infrared measurement technology, and the lack of consideration of the influence of the die, and the modeling process is simple and convenient. , saving cost and time, accurate and reliable results
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Embodiment 1
[0017] Such as figure 1 As shown, this embodiment is a 0.1-watt K-band three-stage power amplifier chip, which includes an amplifier chip equivalent model 1 and a heat sink equivalent model 2. The equivalent model of the amplifier chip includes an active area and a metal interconnection layer 3 , a chip substrate 4 , metal vias 5 , and a gold back 6 . The active area and the metal interconnection layer 3 include an equivalent PHEMT die 7 and an equivalent layout 8, the equivalent layout 8 is distributed around the equivalent PHEMT die 7, and the active area and the metal interconnection layer 3 are distributed on the chip substrate 4 on the upper surface, metal vias 5 are built into the chip substrate 4, the back gold 6 is close to the lower surface of the chip substrate 4, and the equivalent heat sink 3 is fixed between the amplifier chip 2 and the constant temperature working surface 15 (70 degrees Celsius in this example) between. Such as figure 2 As shown, in the equiv...
Embodiment 2
[0023] Such as figure 1 As shown, this embodiment is a 0.5 watt Ka-band three-stage driver chip, which includes an amplifier chip equivalent model 1 and a heat sink equivalent model 2. The equivalent model of the amplifier chip includes an active area and a metal interconnection layer 3 , a chip substrate 4 , metal vias 5 , and a gold back 6 . The active area and the metal interconnection layer 3 include an equivalent PHEMT die 7 and an equivalent layout 8, the equivalent layout 8 is distributed around the equivalent PHEMT die 7, and the active area and the metal interconnection layer 3 are distributed on the chip substrate 4 on the upper surface, metal vias 5 are built into the chip substrate 4, the back gold 6 is close to the lower surface of the chip substrate 4, and the equivalent heat sink 3 is fixed between the amplifier chip 2 and the constant temperature working surface 15 (70 degrees Celsius in this example) between. Such as figure 2 As shown, in the equivalent mo...
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