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Semiconductor device, its manufacturing method, and its manufacturing apparatus

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of inapplicability, low electron mobility of amorphous silicon, etc., and achieve the effect of stable characteristics

Active Publication Date: 2019-07-30
TOKYO ELECTRON LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Organic EL elements are current-driven elements, and in thin film transistors (TFT: ThinFilm Transistor) used in organic EL elements, it is necessary to achieve high-speed switching operations. The electron mobility is not too high, therefore, amorphous silicon is not suitable for the constituent material of organic EL channel

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  • Semiconductor device, its manufacturing method, and its manufacturing apparatus
  • Semiconductor device, its manufacturing method, and its manufacturing apparatus
  • Semiconductor device, its manufacturing method, and its manufacturing apparatus

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Embodiment Construction

[0026] Below, while referring to the attached Figure 1 Embodiments of the present invention will be described.

[0027] First, a bottom-gate thin film transistor (TFT) as a semiconductor device according to a first embodiment of the present invention will be described.

[0028] figure 1 It is a cross-sectional view schematically showing the structure of a TFT as the semiconductor device of the present embodiment. In addition, in figure 1 In , for convenience, not only the structure of the TFT but also the structure of the terminal portion manufactured simultaneously with the TFT is shown (see the right side of the figure).

[0029] exist figure 1 Among them, a plurality of TFTs 10 formed on a substrate 11 include: a gate electrode 12 formed on the substrate 11; a gate insulating film 13 covering the gate electrode 12; a channel 14 (semiconductor film) formed on the gate insulating film 13 The source region 15 and the drain region 16 are formed on both sides of the cha...

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PUM

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Abstract

The invention provides a semiconductor device capable of preventing characteristic change of an oxide semiconductor and having smaller parasitic capacitance, the manufacturing method thereof, and the manufacturing apparatus thereof. In a laminated TFT (10) formed by laminating a gate electrode (12), an IGZO film (40) and a trench protective film (17) from bottom to top, a photoresist mask (41a) representing the width of the gate electrode serves as a mask to partially remove the trench protective film, so that the IGZO film is partially exposed. The exposed portion of the IGZO film and the residual portion of the trench protective film are placed in a plasma formed by mixed processing gas of silicon fluoride gas and nitrogen, and the mixed gas is free of hydrogen. The exposed portion of the IGZO film and the residual portion of the trench protective film are covered with a passivation film (18) formed by a silicon nitride film containing fluorine. During the passivation film is formed, fluorine atoms dispersed from the passivation film to the exposed portion of the IGZO film to form a source area (15) and a drain area (16).

Description

technical field [0001] The present invention relates to a semiconductor device in which an oxide semiconductor is applied to a channel, its manufacturing method, and its manufacturing apparatus. Background technique [0002] In the past, LCD elements were mostly used in the field of flat panel display panels, but in recent years, not only LCD elements have been used, but also the application of organic EL (Electroluminescence) elements has been promoted in order to realize sheet displays (Japanese: シートディスプレイ) and next-generation thin TVs. The organic EL element is a self-luminous light-emitting element, and unlike a liquid crystal element, it does not require a backlight, and thus can realize a thinner display. [0003] Organic EL elements are current-driven elements, and in thin film transistors (TFT: ThinFilm Transistor) used in organic EL elements, it is necessary to achieve high-speed switching operations. Electron mobility is not too high, therefore, amorphous silicon ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/40H01L51/05H01L51/10
CPCH01L29/66742H01L29/7869
Inventor 里吉务古田守
Owner TOKYO ELECTRON LTD