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Polycrystalline silicon sample etching device

An etching device, polysilicon technology, used in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve problems such as difficulty in handling, film peeling, and falling

Active Publication Date: 2015-09-23
CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, tweezers are usually used to hold the sample and put it into the solution for soaking, and the time is manually controlled, but this method is prone to problems: the sample is usually small and difficult to handle, and it is easy to fall into the beaker containing the solution, making the sample If the immersion exceeds the set time, the film will fall off and the sample will be damaged; because the etching solution used is highly oxidizing and highly toxic and volatile, unprotected experimental equipment will damage the health of the operator and cause serious experimental accidents

Method used

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  • Polycrystalline silicon sample etching device
  • Polycrystalline silicon sample etching device
  • Polycrystalline silicon sample etching device

Examples

Experimental program
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Effect test

Embodiment 1

[0031] figure 1 It is a schematic structural view of the polysilicon sample etching device in Example 1, as figure 1 As shown, the polysilicon sample etching device includes a sealed barrel body 100, a connecting rod device 110, a sample holder 130, and a sample carrier 140. A protective tower 120 is provided in the center of the barrel body 100, and the connecting rod device 110 is rotatable perpendicular to the bottom of the barrel body 100. set in the protection tower 120.

[0032] Such as figure 2 As shown, the polysilicon sample etching device further includes a partition 300 connected to the outer wall of the protection tower 120 and perpendicular to the bottom of the barrel 100 , separating the space in the barrel 100 to form more than two working areas. In this embodiment, the number of working areas is three, which are respectively set as a liquid storage tank 400, a cleaning tank 500 and a drying tank 600. The outer wall of the barrel of the liquid storage tank 40...

Embodiment 2

[0060] Figure 5 It is a top view of the polysilicon sample etching device in Example 2 of the present invention, which differs from Example 1 in that the barrel body 100 in Example 1 is a hexagonal barrel, while in Example 2 it is a cylindrical barrel. It can be understood that, in other embodiments, as long as it is a sealed bucket, the bucket body 100 can also be a polygonal bucket with other shapes, such as a pentagonal bucket, an octagonal bucket, and the like. Compared with the hexagonal barrel in embodiment 1, the cylindrical barrel body 100 in embodiment 2 is easier to process, but the partition 300 in embodiment 1 can be fixed at the corner, which facilitates the processing and fixing of the partition 300 .

Embodiment 3

[0062] Image 6 It is a schematic structural diagram of the polysilicon sample etching device in Example 3. The polysilicon sample etching device includes a sealed barrel 100 , a connecting rod device 110 , a sample holder 130 and a sample carrier 140 . A protection tower 120 is provided in the center of the barrel body 100, and a connecting rod device 110 is vertically vertical to the bottom of the barrel body 110 and is vertically arranged in the protection tower 120. The polysilicon sample etching device also includes a partition 310 connected to the outer wall of the protection tower 120, and the The space in the bucket body 100 is separated vertically to form more than two working areas. The connecting rod device 110, the sample holder 130 and the sample carrier 140 are connected in sequence, and the outer wall of the protection tower 120 is provided with a window 180 extending to the bottom of the barrel body 100, so that the sample holder 130 can extend from the protec...

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Abstract

The invention relates to a polycrystalline silicon sample etching device. The polycrystalline silicon sample etching device comprises a sealed barrel, a connection rod device, a sample support and a sample bearing table, wherein a protective tower is arranged at the middle of the barrel, the connection rod device is perpendicular to the bottom of the barrel and is rotatably arranged in the protective tower, the polycrystalline silicon sample etching device also comprises partition plates, the partition plates are connected with the outer wall of the protective tower and are perpendicular to the bottom of the barrel, the space in the barrel is divided into more than two working regions by the partition plates, the connection rod device, the sample support and the sample bearing table are sequentially connected, and a circle of window is formed on the outer wall of the protective tower so that the sample support can extend into the working regions from the protective tower and can rotate with the connection rod device without being blocked by the outer wall of the protective tower. In the polycrystalline silicon sample etching device, the front end of the support is controlled to ascend and descend around a rotary shaft by the connection rod device, so that a sample on the sample bearing table is controlled to be immersed in an etching solution. The sample etching process occurs in a fully-sealed environment provided by the sealed barrel, and thus, the damage to the health of an operator due to volatilization of the etching solution and the like is avoided.

Description

technical field [0001] The invention relates to the field of polysilicon detection, in particular to an etching device for polysilicon detection samples. Background technique [0002] The detection of polysilicon grain size is an important detection item in the crystallization process, and the polysilicon samples used in the detection usually need to etch out obvious grain boundaries by etching, and then use a scanning electron microscope (SEM) to observe the samples. grain size. The quality of grain boundary etching will seriously affect the detection results, which will cause deviations in the judgment of process results. However, grain boundary etching has a strict time control. According to different sample conditions and solution ratios, there are different time limits, usually controlled within a few seconds to tens of seconds. [0003] At present, tweezers are usually used to hold the sample and put it into the solution for soaking, and the time is manually controll...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306H01L21/66
CPCH01L21/30604H01L22/12
Inventor 魏博
Owner CHENGDU VISTAR OPTEOLECTRONICS CO LTD