Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preventing short circuit of anode frame by sticking thin teflon film

A polytetrafluoroethylene and anode frame technology, which is applied in the field of DC magnetron sputtering deposition of thin films, can solve problems such as abnormal stop and inability to start the process, and achieve the effects of improving yield, equipment utilization, and product yield.

Inactive Publication Date: 2015-09-30
HEILONGJIANG HANERGY THIN FILM SOLAR
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem that the process cannot be started or stopped abnormally due to the short circuit between the existing target material and the anode frame, the present invention further proposes a method for preventing the short circuit of the anode frame by bonding polytetrafluoroethylene sheets

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preventing short circuit of anode frame by sticking thin teflon film
  • Method for preventing short circuit of anode frame by sticking thin teflon film

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0014] Specific implementation mode one: combine figure 1 and figure 2 Explain that a method for preventing short circuit of the anode frame by bonding polytetrafluoroethylene sheets described in this embodiment is achieved through the following steps:

[0015] Step 1: Determine the bonding area: the periphery of the anode frame 1 is fixed on the upper end of the target base 2 by bolts, and the bonding area 3 of the polytetrafluoroethylene sheet is set on the inner side of the anode frame 1 and is located on the target base 2 inside;

[0016] Step 2: Bonding PTFE sheets: Cut the PTFE sheets according to the shape of the bonding area 3, and bond the cut PTFE sheets with high-temperature-resistant adhesive or high-temperature-resistant double-sided tape On the bonding area 3 on the anode frame 1 .

[0017] In the DC magnetron sputtering process, the upper end of the target base 2 is provided with an insulating layer 4, the insulating layer 4 is usually a polytetrafluoroethyl...

specific Embodiment approach 2

[0020] Specific implementation mode two: combination figure 1 and figure 2 Note that in step 2 of this embodiment, the thickness of the polytetrafluoroethylene sheet is 100 μm to 500 μm. Other method steps are the same as those in the first embodiment.

[0021] In order to ensure the insulation effect, the thickness of the polytetrafluoroethylene sheet is 100 μm to 500 μm. In addition, a certain thickness of polytetrafluoroethylene coating can be attached to the anode frame 1 to replace the polytetrafluoroethylene sheet, or other high temperature resistant insulator materials can be used instead PTFE.

specific Embodiment approach 3

[0022] Specific implementation mode three: combination figure 1 and figure 2 Note that in the second step of this embodiment, the high temperature resistant glue is high temperature resistant silica gel. Other method steps are the same as those in the first embodiment.

[0023] Dow Corning 736 organic silica gel can be used as the high temperature resistant adhesive, and You DY4589 ​​from Shanghai can be used as the preferred high temperature resistant double sided tape. on bonding area 3.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

A method for preventing a short circuit of an anode frame by sticking a thin teflon film is provided. The invention relates to a technology for depositing thin films through DC (direct current) magnetron sputtering, and particularly to the method for preventing the short circuit of the anode frame by sticking the thin teflon film. The method aims to solve the problem that an existing target and the anode frame are in a short circuit, so that the manufacturing procedure cannot be started or is stopped abnormally. The method for preventing the short circuit of the anode frame by sticking the thin teflon film comprises the steps as follows: step I, determining a sticking area; and step II, sticking the thin teflon film. The method is mainly used for depositing thin films through DC magnetron sputtering.

Description

technical field [0001] The invention relates to a film deposition technology by DC magnetron sputtering, in particular to a method for preventing short circuit of an anode frame by bonding polytetrafluoroethylene sheets. Background technique [0002] Thin-film solar cells usually use magnetron DC sputtering technology to deposit metal back electrodes, and the back electrodes are usually composed of several layers of conductive films. Taking the aluminum film layer as an example for the top metal film layer, its good conductivity can be used as the negative electrode of the battery to collect current, and it is welded with the welding strip in the welding process to lead out the current. The aluminum film layer is deposited by horizontal DC magnetron sputtering equipment. This method can deposit large-area films with good film uniformity and high production efficiency. However, the main problem is that because the target is surrounded by an anode frame, as the use time incre...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
Inventor 杨影
Owner HEILONGJIANG HANERGY THIN FILM SOLAR