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High-voltage pulse power supply IGBT drive cabinet

A high-voltage pulse power supply and chassis technology, applied in the direction of electrical components, output power conversion devices, etc., can solve the problem of low stability of the microprocessor, increase the anti-electromagnetic interference performance, overcome strong electromagnetic interference, and achieve reliable operation Effect

Inactive Publication Date: 2015-10-07
INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the working stability of the microprocessor is low under high electromagnetic interference. Therefore, it is necessary to develop a special drive case for this high-voltage pulse power supply.

Method used

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  • High-voltage pulse power supply IGBT drive cabinet
  • High-voltage pulse power supply IGBT drive cabinet
  • High-voltage pulse power supply IGBT drive cabinet

Examples

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Embodiment Construction

[0020] like figure 1 , 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, a high-voltage pulse power supply IGBT drive chassis, including a chassis bottom plate, optical signal transmission board, fault blocking board, LED display board and signal transfer Connecting boards, 12 connectors one JP1-JP12, two connectors JP13, four connectors three JP14-JP17 and 13 connectors four JPB1-JPB13 are loaded on the bottom plate of the chassis, and the 12 connectors Connector 1 JP1-JP12, plug-in 2 JP13, 4 plug-in 3 JP14-JP17 and 13 plug-in 4 JPB1-JPB13 are connected through PCB wiring; the optical signal sending board is loaded There are signal input circuits, 12 identical optical sending circuits and connector 5 JP2_1, the signal input circuit is that the FSXH signal is connected to the 17th pin of the connector JP2_1, and at the same time, the FSXH signal is connected to one end of the resistor R2_1 , the other end of the resistor R2_1 is connected to the diode D2_1, the capacitor C2_3, the resistor R2...

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Abstract

The invention discloses a high-voltage pulse power supply IGBT drive cabinet which comprises a cabinet bottom board, a light signal sending board, a fault blocking board, an LED display board and a signal change-over board. The cabinet bottom board is equipped with 12 plug members I JP1-JP12, a plug member II JP13, four plug members III JP14-JP17 and 13 plug members IV JPB1- JPB13. The light signal sending board is equipped with a signal input circuit, 12 same optical sending circuits and a plug member V JP2_1. The fault blocking board is equipped with 12 same fault blocking circuits and a plug member VI JP3_1. The high-voltage pulse power supply IGBT drive cabinet not only simplifies a control board, but also improves reliability and anti-electromagnetic interference performance of the control board; for a continuously-operating high-voltage pulse power supply system, the control structure is complex and the number of protection logics is more; and the IGBT drive cabinet can adopt the optical signals to quickly block the output of the high-voltage power supply.

Description

technical field [0001] The invention relates to the technical field of controllers, in particular to a high-voltage pulse power supply IGBT drive chassis. Background technique [0002] The 80Kv / 70A high-voltage pulse power supply is an important part of the national science project EAST neutral beam injection system. The IGBT drive chassis is the soul of the power supply and the key to determine whether the power supply can operate reliably. At present, there is no similar high-power high-voltage pulse power supply in China, and the low-power pulse power supply is controlled by a built-in microprocessor. However, the working stability of the microprocessor is low under high electromagnetic interference. Therefore, it is necessary to develop a special drive case for this high-voltage pulse power supply. Contents of the invention [0003] The object of the present invention is to provide a high-voltage pulse power supply IGBT drive case in order to remedy the defects o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02M1/44
Inventor 潘圣民傅鹏杨雷李云娜何宝灿冯虎林王邓辉吴友国黄懿赟
Owner INST OF PLASMA PHYSICS CHINESE ACAD OF SCI