Microwave power device transient temperature measurement system and its data processing method

Abstract

The present invention discloses a microwave power device transient temperature measurement system and a data processing method thereof, relating to the field of microwave power device temperature measuring device or method technology. The measurement system comprises an infrared radiation detector which is connected to the signal input end of an amplification circuit and is used for collecting the infrared radiation signal emitted by a microwave power device, the amplification circuit which is connected to the signal input end of a data acquisition card and is used for amplifying the collected infrared radiation signal, the data acquisition card which is in bidirectional data exchange with an industrial control computer and is used for carrying out data collection according to the control of the industrial control computer, and the industrial control computer which is used for processing the data collected by the data acquisition card, converting the electrical signal collected by the data acquisition card into temperature data and storing and displaying the temperature data. Through the measurement system, the periodic and aperiodic arbitrary transient temperature measurement of the microwave power device can be realized, and the measurement speed is fast, and the precision is high.

Description

technical field [0001] The invention relates to the technical field of a microwave power device temperature measuring device or method, in particular to a microwave power device transient temperature measuring system and a data processing method thereof. Background technique [0002] In the field of temperature measurement of microwave power devices, infrared temperature measurement is widely used in temperature measurement of various devices because of its non-contact measurement and the characteristics of not affecting the normal working conditions of devices. [0003] Since it does not need to be in direct contact with the device under test, the infrared temperature measuring device is suitable for any kind of microwave power device. For microwave power devices, the temperature or its changes under different conditions can reflect different characteristics of the device. For example, the microscopic infrared thermal imaging device can obtain the temperature distribution o...

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Problems solved by technology

[0008] 3) The electrical method will affect the working state of the device, and the maturity of the temperature measurement of emerging high-power devices such as GaN HEMT is relatively poor, and the transient temperature cannot be measured

[0011] 1) The measurement speed of the microscopic infrared thermal imaging device is slow, and it can only realize the detection of the frame frequency below 50Hz. The frame frequency of some thermal imagers with low precision can reach hundreds, but these cannot meet the high-speed changing temperature signal. testing needs

[0012] 2) Transient infrared equipment only measures periodic temperature signals

Does not have the ability to measure non-periodic temperature signals

[0013] 3) The electrical method will affect the working status of the device, and cannot measure emerging high-power devices such as GaN HEMTs

[0014] 4) The Raman method system is complex and the measurement speed is slow, and it is not yet possible to measure the transient temperature in China

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