Memory programming method and system
A technology of memory and programming voltage, applied in the field of memory, can solve the problems of occupation, increasing the number of capacitors and diodes in the charge pump, large memory area, etc.
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Embodiment 1
[0062] refer to figure 1 , which shows a flow chart of a memory programming method according to Embodiment 1 of the present invention, and the method may specifically include the following steps:
[0063] Step 101 , after receiving a programming instruction, the memory determines a multi-byte storage unit corresponding to the programming instruction that needs to be programmed.
[0064] In the embodiment of the present invention, the memory may include a plurality of storage units, and the programming and erasing operations on the memory refer to programming and erasing operations on the storage units inside the memory. Therefore, after the memory receives a programming instruction (such as "02H", "F2H", etc.), it can first determine the multi-byte storage unit corresponding to the programming instruction that needs to be programmed, that is, determine the Programming instructions, which memory cells in the memory need to be programmed.
[0065] Step 102, the memory compares...
Embodiment 2
[0074] refer to figure 2 , which shows a flow chart of a memory programming method according to Embodiment 2 of the present invention, and the method may specifically include the following steps:
[0075] In step 201, after receiving a programming instruction, the memory determines a multi-byte storage unit corresponding to the programming instruction that needs to be programmed.
[0076] In the embodiment of the present invention, the memory may include an internal charge pump, and the input voltage of the internal charge pump is a power supply voltage, and the memory may also include a plurality of storage units, and the programming and erasing operations of the memory are as follows: Refers to performing programming and erasing operations on storage cells inside the memory. Taking non-volatile memory as an example, the non-volatile memory includes an array of storage cells, one of which is usually a floating gate device that can store charges, compared to general MOS tran...
Embodiment 3
[0123] refer to image 3 , shows a structural block diagram of a memory programming system according to Embodiment 3 of the present invention, wherein the memory is externally connected with a pre-set external power adapter board, the memory includes an internal charge pump and a plurality of storage units, the The input voltage of the internal charge pump is the power supply voltage. The system can specifically include the following modules:
[0124] A determining module 301, configured to, after receiving the programming instruction, determine the multi-byte storage unit corresponding to the programming instruction that needs to be programmed;
[0125] A comparison module 302, configured to compare the power supply voltage with a preset internal voltage;
[0126] The first selection module 303 is configured to select the internal charge pump to provide the programming voltage when the preset internal voltage threshold is less than or equal to the power supply voltage, and p...
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