Data storage method, memorizer control circuit unit and memorizer storage device

A technology for data storage and control circuits, which is applied in the field of data storage, memory control circuit units and memory storage devices, and can solve problems such as low stability and reduced system performance

Inactive Publication Date: 2015-11-04
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the stability of the MLC NAND flash memory is lower than that of the SLC NAND flash memory. Therefore, some physical erase blocks of the MLC NAND flash memory have more error bits (Error bits) when the erasing times are very low. bit) generates
In order to avoid the data loss stored in the physical erasi

Method used

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  • Data storage method, memorizer control circuit unit and memorizer storage device
  • Data storage method, memorizer control circuit unit and memorizer storage device
  • Data storage method, memorizer control circuit unit and memorizer storage device

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Experimental program
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Embodiment Construction

[0100] [First Exemplary Embodiment]

[0101] figure 1 It is a schematic diagram showing a host system and a memory storage device according to an exemplary embodiment.

[0102] Please refer to figure 1 , the host system 1000 generally includes a computer 1100 and an input / output (I / O) device 1106 . The computer 1100 includes a microprocessor 1102 , a random access memory (random access memory, RAM) 1104 , a system bus 1108 and a data transmission interface 1110 . The input / output device 1106 includes such as figure 2 mouse 1202, keyboard 1204, monitor 1206 and printer 1208. It is important to understand that figure 2 The devices shown are not limited to the input / output device 1106, which may also include other devices.

[0103] In the embodiment of the present invention, the memory storage device 100 is electrically connected with other components of the host system 1000 through the data transmission interface 1110 . Data can be written into or read from the memory s...

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PUM

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Abstract

The invention discloses a data storage method, a memorizer control circuit unit and a memorizer storage device. The method comprises a step of recording an error bit number of each preset area of each physical erasing unit; and a step of judging whether the error bit number of one preset area of a physical programmed unit of the physical erasing unit is greater than an error bit number threshold value or not. The method further comprises a step of storing the data in a second programmed mode after carrying out the erasing operation on the physical erasing unit when the error bit number of one preset area of the physical programming unit of the physical erasing unit is greater than the error bit number threshold value. On this foundation, the data storage method provided by the invention can effectively use the poor physical erasing unit to reach the effect of prolonging the service life of the memorizer storage device.

Description

technical field [0001] The invention relates to a data storage method for a rewritable non-volatile memory, a memory control circuit unit and a memory storage device. Background technique [0002] The rapid growth of digital cameras, mobile phones, and MP3 players has led to a rapid increase in consumer demand for storage media. Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., it is most suitable for portable electronic products, such as laptop. A solid state drive is a memory storage device that uses flash memory as a storage medium. Therefore, the flash memory industry has become a very popular part of the electronics industry in recent years. [0003] Among the rewritable non-volatile memories, NAND flash memory is the most widely used, and according to the number of bits that can be stored in each storage unit, NAND f...

Claims

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Application Information

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IPC IPC(8): G06F12/02
Inventor 梁鸣仁
Owner PHISON ELECTRONICS
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