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Quick three-dimensional mask diffraction near-field calculation method based on sample library and data fitting

A technology of data fitting and calculation method, which is applied in the direction of photomechanical processing of originals for photomechanical processing, photographic process of pattern surface, optics, etc. It can solve the problem that the near-field accuracy of diffraction needs to be improved, and the influence of three-dimensional mask graphics is not considered, etc. question

Active Publication Date: 2015-11-11
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology

However, the above method does not consider the influence of the corner structure of the three-dimensional mask pattern on its diffraction near-field, and the accuracy of the diffraction near-field obtained by the simple splicing method needs to be improved

Method used

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  • Quick three-dimensional mask diffraction near-field calculation method based on sample library and data fitting
  • Quick three-dimensional mask diffraction near-field calculation method based on sample library and data fitting
  • Quick three-dimensional mask diffraction near-field calculation method based on sample library and data fitting

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Embodiment

[0143] exist Figure 4 Among them, 401 is a correction mask pattern for calculating the correction factor of diffraction near-field data; 402 is a test mask pattern for testing the method of the present invention, that is, the mask pattern whose diffraction matrix needs to be calculated. Figure 4 The masks in are all binary masks, where the gray area represents the light-blocking area and the white area represents the light-transmitting area.

[0144] Figure 5 It is a schematic diagram of the XX, XY, YX and YY diffraction matrices of the test mask calculated by the FDTD method. exist Figure 5 Among them, 501 is the XX diffraction matrix of the test mask calculated by the FDTD method; 502 is the XY diffraction matrix of the test mask calculated by the FDTD method; 503 is the YX of the test mask calculated by the FDTD method Diffraction matrix; 504 is the YY diffraction matrix of the test mask calculated by using the FDTD method.

[0145] Image 6 It is a schematic diagr...

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Abstract

The invention provides a quick three-dimensional mask diffraction near-field calculation method based on sample library and data fitting. The method includes following particular steps: a) establishing a three-dimensional mask diffraction matrix sample library, and calculating diffraction near-field data correction factors corresponding to convex angles, concave angles and edge zones; b) to one three-dimensional mask requiring diffraction near-field calculation, determining an plurality of observation points on the mask, and distributing a sub zone to each observation point; (c) with each observation point as a center, setting a squared zone surrounding the observation point on the mask; (d) according to the squared zone and the sample library, with kernel regression technology and a data fitting method, respectively calculating a diffraction matrix regression result corresponding to each observation point; and (e) finally filling the regression results of all observation points into corresponding sub zones, thereby splicing the diffraction matrix regression result corresponding to the whole three-dimensional mask. The method considers the influence of corner structures to the diffraction near field in the three-dimensional mask graph, so that calculation precision of three-dimensional mask diffraction near-field calculation is increased.

Description

technical field [0001] The invention relates to a fast three-dimensional mask diffraction near-field calculation method based on a sample library and data fitting, and belongs to the technical field of photolithography system imaging simulation and resolution enhancement. Background technique [0002] The spatial imaging simulation method of the lithography system is an important part of the lithography simulation. It is an important means to predict the quality of the lithography imaging, the influence of various process change factors and system errors on the lithography image quality, and it is also the resolution enhancement technology of the lithography system. Foundation. As the lithography technology node continues to move down, the three-dimensional effect of the mask has an increasingly significant impact on the imaging performance of the lithography system. Therefore, the three-dimensional effect of the mask must be considered in the spatial imaging simulation of t...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36G03F1/44
Inventor 马旭高杰陈譞博董立松李艳秋
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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